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Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
51AH7965
|
Newark | Mosfet, P Channel, -40V, 18.6A, Soic, Transistor Polarity:P Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:-40V, On Resistance Rds(On):0.0075Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-3V, Power Rohs Compliant: Yes |Vishay SI7463DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2686 |
|
$2.0100 / $3.0600 | Buy Now |
DISTI #
26R1925
|
Newark | P Channel Mosfet, -40V, 18.6A, Soic, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:18.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI7463DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.8100 | Buy Now |
DISTI #
15R5206
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Newark | P Channel Mosfet, -40V, 18.6A, Soic, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:18.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:1.9W Rohs Compliant: Yes |Vishay SI7463DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.2200 / $1.4600 | Buy Now |
DISTI #
SI7463DP-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SI7463DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$1.1661 | Buy Now |
DISTI #
82701094
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Verical | Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2420 | Americas - 3000 |
|
$1.1607 / $1.2260 | Buy Now |
DISTI #
SI7463DP-T1-GE3
|
TTI | MOSFETs 40V 18.6A 5.4W 9.2mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 21000 In Stock |
|
$1.2000 / $1.3000 | Buy Now |
|
Chip 1 Exchange | INSTOCK | 7800 |
|
RFQ | |
DISTI #
C1S803601630483
|
Chip1Stop | Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R RoHS: Compliant pbFree: Yes | 3000 |
|
$1.0700 | Buy Now |
DISTI #
SI7463DP-T1-GE3
|
EBV Elektronik | Trans MOSFET P-CH 40V 11A 8-Pin PowerPAK SO T/R (Alt: SI7463DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 6266 |
|
$1.6300 / $1.9700 | Buy Now |
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SI7463DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI7463DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0092 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XDSO-C5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 5.4 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI7463DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI7463DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI7463DP-T1-E3 | Power Field-Effect Transistor, 11A I(D), 40V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SI7463DP-T1-GE3 vs SI7463DP-T1-E3 |