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Power Field-Effect Transistor, 12A I(D), 40V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70-6L, 6 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
27AK1000
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SIA440DJ-T1-GE3 RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 25376 |
|
$0.1740 / $0.1890 | Buy Now |
DISTI #
40X8664
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Newark | Mosfet, N-Ch, 40V, 12A, Powerpak Sc70, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:12A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.4V Rohs Compliant: Yes |Vishay SIA440DJ-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 2785 |
|
$0.1140 | Buy Now |
DISTI #
99W9417
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Newark | N-Channel 40-V (D-S) Mosfet |Vishay SIA440DJ-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1590 / $0.1710 | Buy Now |
DISTI #
79AH6461
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Newark | N-Channel 60-V (D-S) Mosfet Rohs Compliant: No |Vishay SIA440DJ-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.1890 | Buy Now |
DISTI #
27AK1000
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Avnet Americas | Trans MOSFET N-CH 40V 8.6A 6-Pin PowerPAK SC-70 T/R - Product that comes on tape, but is not reeled (Alt: 27AK1000) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Ammo Pack | 25376 Partner Stock |
|
$0.2440 / $0.4300 | Buy Now |
DISTI #
40X8664
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Avnet Americas | Trans MOSFET N-CH 40V 8.6A 6-Pin PowerPAK SC-70 T/R - Bulk (Alt: 40X8664) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 17 Weeks, 3 Days Container: Bulk | 2785 Partner Stock |
|
$0.2680 / $0.4540 | Buy Now |
DISTI #
SIA440DJ-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 40V 8.6A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA440DJ-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.1277 | Buy Now |
DISTI #
78-SIA440DJ-T1-GE3
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Mouser Electronics | MOSFETs 40V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 163063 |
|
$0.1290 / $0.4100 | Buy Now |
|
Future Electronics | Single N-Ch 40 V 26 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK SC-70 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel | 0Reel |
|
$0.1270 / $0.1370 | Buy Now |
|
Future Electronics | Single N-Ch 40 V 26 mOhm Surface Mount TrenchFET® Power Mosfet - PowerPAK SC-70 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$0.1270 / $0.1370 | Buy Now |
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SIA440DJ-T1-GE3
Vishay Intertechnologies
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Datasheet
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SIA440DJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 12A I(D), 40V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70-6L, 6 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | SMALL OUTLINE, S-PDSO-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 6 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |