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Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0373
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Newark | Mosfet, Dual/P-Ch/20V/4.5A/Powerpak Sc70 Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7057 |
|
$0.4250 / $0.6810 | Buy Now |
DISTI #
15R4844
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Newark | Mosfet Transistor Array, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:4.5A, Continuous Drain Current Id P Channel:4.5A Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2120 / $0.2820 | Buy Now |
DISTI #
63R6002
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Newark | Mosfet Transistor Array, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.5A, On Resistance Rds(On):0.059Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, No. Of Pins:6Pins Rohs Compliant: Yes |Vishay SIA921EDJ-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.3520 | Buy Now |
DISTI #
SIA921EDJ-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA921EDJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
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$0.2160 / $0.2744 | Buy Now |
DISTI #
781-SIA921EDJ-GE3
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Mouser Electronics | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 76687 |
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$0.2010 / $0.6100 | Buy Now |
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Future Electronics | MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1980 / $0.2100 | Buy Now |
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Future Electronics | MOSFET 20V 4.5A 7.8W 59mohm @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.1980 / $0.2100 | Buy Now |
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Bristol Electronics | 2769 |
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RFQ | ||
DISTI #
SIA921EDJ-T1-GE3
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TTI | MOSFET -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 18000 In Stock |
|
$0.2000 / $0.2170 | Buy Now |
DISTI #
SIA921EDJ-T1-GE3
|
TME | Transistor: P-MOSFET, unipolar, -20V, -4.5A, Idm: -15A, 5W Min Qty: 1 | 0 |
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$0.2810 / $0.5880 | RFQ |
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SIA921EDJ-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA921EDJ-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, SC-70, POWERPAK-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.5 A | |
Drain-source On Resistance-Max | 0.059 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 7.8 W | |
Pulsed Drain Current-Max (IDM) | 15 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |