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Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SIA921EDJ-T4-GE3
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Avnet Americas | DUAL P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIA921EDJ-T4-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.2182 | Buy Now |
DISTI #
78-SIA921EDJ-T4-GE3
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Mouser Electronics | MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant | 2755 |
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$0.2020 / $0.6100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks | 0 |
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$0.2140 | Buy Now |
DISTI #
SIA921EDJ-T4-GE3
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TTI | MOSFETs -20V Vds 12V Vgs PowerPAK SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.2030 / $0.2250 | Buy Now |
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SIA921EDJ-T4-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIA921EDJ-T4-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Vishay | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
Drain Current-Max (ID) | 4.5 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 7.8 W | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |