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Transistors / Power Field-Effect Transistors / SIB406EDK-T1-GE3
Datasheets
SIB406EDK-T1-GE3 by:

Power Field-Effect Transistor, 5.1A I(D), 20V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-75, POWERPAK, 6 PIN

Part Details for SIB406EDK-T1-GE3 by Vishay Intertechnologies

Overview of SIB406EDK-T1-GE3 by Vishay Intertechnologies

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Applications Environmental Monitoring Industrial Automation Agriculture Technology Virtual Reality (VR), Augmented Reality (AR), and Vision Systems

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Price & Stock for SIB406EDK-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 15R4846
Newark Mosfet, N Channel, 20V, 6A, Powerpak Sc75-6, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Power Dissipation:10W Rohs Compliant: Yes |Vishay SIB406EDK-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2200
  • 5,000 $0.2150
  • 10,000 $0.1990
  • 20,000 $0.1850
  • 30,000 $0.1730
  • 50,000 $0.1650
$0.1650 / $0.2200 Buy Now
DISTI # 17X9996
Newark Mosfet, N Channel, 20V, 6A, Powerpak Sc75-6, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:600Mv Rohs Compliant: Yes |Vishay SIB406EDK-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.2150
$0.2150 Buy Now
DISTI # SIB406EDK-T1-GE3
Avnet Americas N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB406EDK-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1534
$0.1534 Buy Now
DISTI # 781-SIB406EDK-GE3
Mouser Electronics MOSFETs 20V Vds 12V Vgs PowerPAK SC-75 RoHS: Compliant 11184
  • 1 $0.5500
  • 10 $0.4720
  • 100 $0.3290
  • 500 $0.2570
  • 1,000 $0.2090
  • 3,000 $0.1720
  • 9,000 $0.1700
  • 24,000 $0.1560
$0.1560 / $0.5500 Buy Now
Future Electronics MOSFET 20V Vds 12V Vgs PowerPAK SC-75 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 3,000 $0.1980
  • 6,000 $0.1940
  • 9,000 $0.1920
  • 12,000 $0.1900
  • 15,000 $0.1850
$0.1850 / $0.1980 Buy Now
DISTI # 66387744
Verical Trans MOSFET N-CH 20V 6A 6-Pin PowerPAK SC-75 T/R RoHS: Compliant Min Qty: 80 Package Multiple: 1 Date Code: 2240 Americas - 295
  • 81 $0.3863
  • 117 $0.2688
  • 200 $0.2675
$0.2675 / $0.3863 Buy Now
DISTI # SIB406EDK-T1-GE3
TTI MOSFETs 20V Vds 12V Vgs PowerPAK SC-75 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 6000
In Stock
  • 3,000 $0.1690
  • 6,000 $0.1650
  • 9,000 $0.1610
  • 24,000 $0.1560
$0.1560 / $0.1690 Buy Now
DISTI # SIB406EDK-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 20V, 6A, Idm: 15A, 10W Min Qty: 3000 0
  • 3,000 $0.2920
$0.2920 RFQ
DISTI # C1S806000600480
Chip1Stop Trans MOSFET N-CH 20V 5.1A 6-Pin PowerPAK SC-75 T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 295
  • 5 $0.3690
  • 50 $0.3160
  • 100 $0.2200
  • 200 $0.2190
$0.2190 / $0.3690 Buy Now
DISTI # SIB406EDK-T1-GE3
EBV Elektronik Trans MOSFET N-CH 20V 5.1A 6-Pin PowerPAK SC-75 T/R (Alt: SIB406EDK-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIB406EDK-T1-GE3

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SIB406EDK-T1-GE3 Part Data Attributes

Parametric Data
SIB406EDK-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIB406EDK-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 5.1A I(D), 20V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-75, POWERPAK, 6 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SC-75, POWERPAK, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 10 W
Pulsed Drain Current-Max (IDM) 15 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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