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Part Details for SIDR626DP-T1-GE3 by Vishay Intertechnologies
Overview of SIDR626DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIDR626DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
78AC6503
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Newark | Mosfet, N-Ch, 60V, 100A, 150Deg C, 125W, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0014Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.4V, Power Rohs Compliant: Yes |Vishay SIDR626DP-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 8656 |
|
$2.0900 / $2.8400 | Buy Now |
|
DISTI #
59AC7338
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Newark | N-Channel 60-V (D-S) Mosfet |Vishay SIDR626DP-T1-GE3 RoHS: Not Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1800 / $1.2200 | Buy Now |
|
DISTI #
SIDR626DP-T1-GE3
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Avnet Americas | N-CHANNEL 60-V (D-S) MOSFET - Tape and Reel (Alt: SIDR626DP-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$1.1268 | Buy Now |
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DISTI #
78-SIDR626DP-T1-GE3
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Mouser Electronics | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant | 15602 |
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$1.2200 / $2.6000 | Buy Now |
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Future Electronics | Single N-Channel 60 V 1.7 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8DC RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel | 0Reel |
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$1.1100 | Buy Now |
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Future Electronics | Single N-Channel 60 V 1.7 mOhm SMT TrenchFET® Power Mosfet - PowerPAK SO-8DC RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Lead time: 22 Weeks Container: Reel | 0Reel |
|
$1.1400 | Buy Now |
|
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Bristol Electronics | 1876 |
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RFQ | ||
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DISTI #
SIDR626DP-T1-GE3
|
TTI | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8DC RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$1.1500 | Buy Now |
|
DISTI #
C1S803605675873
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Chip1Stop | MOSFET RoHS: Compliant | 6000 |
|
$1.1839 / $1.2295 | Buy Now |
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DISTI #
C1S803605874304
|
Chip1Stop | MOSFET RoHS: Compliant Container: Cut Tape | 5370 |
|
$1.0600 / $1.0800 | Buy Now |
Part Details for SIDR626DP-T1-GE3
SIDR626DP-T1-GE3 CAD Models
SIDR626DP-T1-GE3 Part Data Attributes
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SIDR626DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIDR626DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 22 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 125 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.0017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 94 pF | |
| JESD-30 Code | R-PDSO-N8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 78 ns | |
| Turn-on Time-Max (ton) | 88 ns |