SIE816DF-T1-E3
Description: Power Field-Effect Transistor, 19.8A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POLARPAK-10

Overview of SIE816DF-T1-E3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Environmental Monitoring Space Technology Internet of Things (IoT) Industrial Automation Financial Technology (Fintech) Smart Cities Energy and Power Systems Transportation and Logistics Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Security and Surveillance Electronic Manufacturing Renewable Energy Robotics and Drones

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Price & Stock for SIE816DF-T1-E3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   2469
RFQ
DISTI # SIE816DF-T1-E3
EBV Elektronik Trans MOSFET N-CH 60V 19.8A 10-Pin PolarPAK T/R (Alt: SIE816DF-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days EBV - 0
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CAD Models for SIE816DF-T1-E3 by Vishay Intertechnologies
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Part Data Attributes for SIE816DF-T1-E3 by Vishay Intertechnologies

SIE816DF-T1-E3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
ROHS COMPLIANT, LEADLESS, POLARPAK-10
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
125 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
19.8 A
Drain-source On Resistance-Max
0.0074 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-N4
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
60 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
NO LEAD
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. SIE816DF-T1-E3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 19.8A I(D), 60V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LEADLESS, POLARPAK-10
    VS

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