There are no models available for this part yet.
Overview of SIE816DF-T1-E3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Environmental Monitoring
Space Technology
Internet of Things (IoT)
Industrial Automation
Financial Technology (Fintech)
Smart Cities
Energy and Power Systems
Transportation and Logistics
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Security and Surveillance
Electronic Manufacturing
Renewable Energy
Robotics and Drones
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIE816DF-T1-E3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 2469 |
|
RFQ | ||||
DISTI #
SIE816DF-T1-E3
|
EBV Elektronik | Trans MOSFET N-CH 60V 19.8A 10-Pin PolarPAK T/R (Alt: SIE816DF-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for SIE816DF-T1-E3 by Vishay Intertechnologies
Part Data Attributes for SIE816DF-T1-E3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Package Description
|
ROHS COMPLIANT, LEADLESS, POLARPAK-10
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Reach Compliance Code
|
compliant
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ECCN Code
|
EAR99
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Avalanche Energy Rating (Eas)
|
125 mJ
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
60 V
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Drain Current-Max (ID)
|
19.8 A
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Drain-source On Resistance-Max
|
0.0074 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-XDSO-N4
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JESD-609 Code
|
e3
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Moisture Sensitivity Level
|
1
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Number of Elements
|
1
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Number of Terminals
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4
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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UNSPECIFIED
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Package Shape
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RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
125 W
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Pulsed Drain Current-Max (IDM)
|
60 A
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Qualification Status
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Not Qualified
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Surface Mount
|
YES
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Terminal Finish
|
MATTE TIN
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Terminal Form
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NO LEAD
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Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
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