Datasheets
SIHA21N60EF-E3 by:

Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SIHA21N60EF-E3 by Vishay Intertechnologies

Overview of SIHA21N60EF-E3 by Vishay Intertechnologies

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Price & Stock for SIHA21N60EF-E3

Part # Distributor Description Stock Price Buy
DISTI # SIHA21N60EF-E3
Avnet Americas N-CHANNEL 600V - Tape and Reel (Alt: SIHA21N60EF-E3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.7945
$1.7945 Buy Now
DISTI # 78-SIHA21N60EF-E3
Mouser Electronics MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 0
  • 1,000 $1.9900
  • 2,000 $1.8700
$1.8700 / $1.9900 Order Now
Future Electronics 600v,21a,.176ohm , n channel , TO-220 MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks Container: Reel 0
Reel
  • 1,000 $1.8500
  • 2,000 $1.8100
$1.8100 / $1.8500 Buy Now
Future Electronics 600v,21a,.176ohm , n channel , TO-220 MOSFET RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $1.8500
  • 2,000 $1.8100
$1.8100 / $1.8500 Buy Now
DISTI # SIHA21N60EF-E3
TTI MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel Americas - 0
  • 1,000 $1.8800
  • 2,000 $1.8400
  • 5,000 $1.8000
$1.8000 / $1.8800 Buy Now
DISTI # SIHA21N60EF-E3
EBV Elektronik Trans MOSFET N-CH 600V 21A 3-Pin TO-220FP (Alt: SIHA21N60EF-E3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 21A 176m10V11A 35W 4V250uA 1 N-Channel TO-220F-3 MOSFETs ROHS 3
  • 1 $5.8516
  • 10 $5.7307
  • 30 $5.6506
  • 100 $5.5690
$5.5690 / $5.8516 Buy Now

Part Details for SIHA21N60EF-E3

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SIHA21N60EF-E3 Part Data Attributes

SIHA21N60EF-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHA21N60EF-E3 Vishay Intertechnologies Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 367 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.176 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 53 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHA21N60EF-E3

This table gives cross-reference parts and alternative options found for SIHA21N60EF-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHA21N60EF-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPA60R165CPXKSA1 Power Field-Effect Transistor, 21A I(D), 650V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIHA21N60EF-E3 vs IPA60R165CPXKSA1
SIHA22N60E-E3 Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies SIHA21N60EF-E3 vs SIHA22N60E-E3
SIHA21N60EF-GE3 Power Field-Effect Transistor, 21A I(D), 600V, 0.176ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies SIHA21N60EF-E3 vs SIHA21N60EF-GE3
SPA20N60C3XK Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN Infineon Technologies AG SIHA21N60EF-E3 vs SPA20N60C3XK
SPA20N65C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 Infineon Technologies AG SIHA21N60EF-E3 vs SPA20N65C3XKSA1
TK17A65W5 Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V Toshiba America Electronic Components SIHA21N60EF-E3 vs TK17A65W5
SPW20N60S5FKSA1 Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SIHA21N60EF-E3 vs SPW20N60S5FKSA1
SIHP14N60E-GE3 Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies SIHA21N60EF-E3 vs SIHP14N60E-GE3

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