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Transistors / Power Field-Effect Transistors / SIHD3N50D-GE3
Datasheets
SIHD3N50D-GE3 by:

Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for SIHD3N50D-GE3 by Vishay Intertechnologies

Overview of SIHD3N50D-GE3 by Vishay Intertechnologies

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Price & Stock for SIHD3N50D-GE3

Part # Distributor Description Stock Price Buy
DISTI # 99W9455
Newark Mosfet, N-Ch, 500V, 3A, To-252Aa-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHD3N50D-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4120
  • 5,000 $0.4030
  • 10,000 $0.3720
  • 20,000 $0.3470
  • 30,000 $0.3230
  • 50,000 $0.3090
$0.3090 / $0.4120 Buy Now
DISTI # 08X3789
Newark Mosfet, N Channel, 500V, 3A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHD3N50D-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 2,500 $0.4030
$0.4030 Buy Now
DISTI # SIHD3N50D-GE3
Avnet Americas Trans MOSFET N-CH 500V 3A 3-Pin DPAK - Tape and Reel (Alt: SIHD3N50D-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4013
  • 6,000 $0.3884
  • 12,000 $0.3756
  • 18,000 $0.3604
  • 24,000 $0.3487
  • 30,000 $0.3323
  • 300,000 $0.3159
$0.3159 / $0.4013 Buy Now
DISTI # 78-SIHD3N50D-GE3
Mouser Electronics MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant 3101
  • 1 $0.8900
  • 10 $0.7680
  • 100 $0.5320
  • 500 $0.4450
  • 1,000 $0.3790
  • 3,000 $0.3260
  • 6,000 $0.3180
  • 9,000 $0.2950
$0.2950 / $0.8900 Buy Now
DISTI # SIHD3N50D-GE3
TTI MOSFET 500V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 50 Container: Tube Americas - 0
  • 3,000 $0.3200
  • 4,000 $0.3100
  • 6,000 $0.3100
  • 9,000 $0.2900
$0.2900 / $0.3200 Buy Now
DISTI # SIHD3N50D-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 1.9A, Idm: 5.5A, 69W Min Qty: 1 0
  • 1 $0.8510
  • 100 $0.5080
  • 500 $0.4260
$0.4260 / $0.8510 RFQ
DISTI # SIHD3N50D-GE3
EBV Elektronik Trans MOSFET N-CH 500V 3A 3-Pin DPAK (Alt: SIHD3N50D-GE3) RoHS: Compliant Min Qty: 75 Package Multiple: 75 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHD3N50D-GE3

SIHD3N50D-GE3 CAD Models

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SIHD3N50D-GE3 Part Data Attributes:

Parametric Data
SIHD3N50D-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHD3N50D-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 9 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 3 A
Drain-source On Resistance-Max 3.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 5.5 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHD3N50D-GE3

This table gives cross-reference parts and alternative options found for SIHD3N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHD3N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SIHD3N50D-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHD3N50D-GE3 vs SIHD3N50D-GE3
SIHU3N50D-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHD3N50D-GE3 vs SIHU3N50D-GE3
SIHU3N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHD3N50D-GE3 vs SIHU3N50D-E3
FS3VS-9-T2 Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric SIHD3N50D-GE3 vs FS3VS-9-T2
SIHD3N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHD3N50D-GE3 vs SIHD3N50D-E3
SIHU3N50D-GE3 Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Vishay Intertechnologies SIHD3N50D-GE3 vs SIHU3N50D-GE3
SIHU3N50D-E3 Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, Vishay Intertechnologies SIHD3N50D-GE3 vs SIHU3N50D-E3
2SK1721(2-10S2B) TRANSISTOR 3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components SIHD3N50D-GE3 vs 2SK1721(2-10S2B)
SIHD3N50DT1-GE3 Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Vishay Intertechnologies SIHD3N50D-GE3 vs SIHD3N50DT1-GE3
FS3VS-9-T1 Power Field-Effect Transistor, 3A I(D), 450V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 3 PIN Mitsubishi Electric SIHD3N50D-GE3 vs FS3VS-9-T1

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