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Transistors / Power Field-Effect Transistors / SIHF12N65E-GE3
Datasheets
SIHF12N65E-GE3 by:

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3

Part Details for SIHF12N65E-GE3 by Vishay Intertechnologies

Overview of SIHF12N65E-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Automotive

Price & Stock for SIHF12N65E-GE3

Part # Distributor Description Stock Price Buy
DISTI # SIHF12N65E-GE3
Avnet Americas Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak - Tape and Reel (Alt: SIHF12N65E-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 21 Weeks, 0 Days Container: Reel 0
  • 1,000 $1.4149
  • 2,000 $1.3695
  • 4,000 $1.3241
  • 6,000 $1.2705
  • 8,000 $1.2292
  • 10,000 $1.1715
  • 100,000 $1.1138
$1.1138 / $1.4149 Buy Now
DISTI # 78-SIHF12N65E-GE3
Mouser Electronics MOSFET 650V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant 893
  • 1 $2.4600
  • 10 $1.8700
  • 100 $1.5400
  • 250 $1.4800
  • 500 $1.3100
  • 1,000 $1.1800
$1.1800 / $2.4600 Buy Now
Future Electronics E Series N Channel 650 V 380 mΩ 70 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.1300
  • 2,000 $1.1100
  • 3,000 $1.1000
  • 4,000 $1.0900
$1.0900 / $1.1300 Buy Now
Future Electronics E Series N Channel 650 V 380 mΩ 70 nC Flange Mount Power Mosfet - TO-220FP RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 22 Weeks Container: Tube 0
Tube
  • 50 $1.1300
  • 2,000 $1.1100
  • 3,000 $1.1000
  • 4,000 $1.0900
$1.0900 / $1.1300 Buy Now
DISTI # SIHF12N65E-GE3
TTI MOSFET 650V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 50 Package Multiple: 50 Container: Tube Americas - 1000
In Stock
  • 50 $1.8500
  • 100 $1.5200
  • 250 $1.4700
  • 500 $1.3000
  • 1,000 $1.1700
  • 2,000 $1.1100
  • 5,000 $1.0700
$1.0700 / $1.8500 Buy Now
DISTI # SIHF12N65E-GE3
TME Transistor: N-MOSFET, unipolar, 650V, 8A, Idm: 28A, 33W, TO220FP Min Qty: 1 0
  • 1 $2.1700
  • 5 $1.9600
  • 25 $1.7300
  • 100 $1.5600
  • 500 $1.4500
$1.4500 / $2.1700 RFQ
DISTI # SIHF12N65E-GE3
EBV Elektronik Trans MOSFET N-CH 650V 12A 3-Pin TO-220 Full-Pak (Alt: SIHF12N65E-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 23 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHF12N65E-GE3

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SIHF12N65E-GE3 Part Data Attributes

Parametric Data
SIHF12N65E-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHF12N65E-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, FULLPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 22 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 226 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF12N65E-GE3

This table gives cross-reference parts and alternative options found for SIHF12N65E-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF12N65E-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
TK13A65U TRANSISTOR 13 A, 650 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-10U1B, SC-67, 3 PIN, FET General Purpose Power Toshiba America Electronic Components SIHF12N65E-GE3 vs TK13A65U
SSF11NS65UF Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Suzhou Good-Ark Electronics Co Ltd SIHF12N65E-GE3 vs SSF11NS65UF
SIHA12N60E-E3 Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Intertechnologies SIHF12N65E-GE3 vs SIHA12N60E-E3
IPAN70R360P7SXKSA1 Power Field-Effect Transistor, 700V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN Infineon Technologies AG SIHF12N65E-GE3 vs IPAN70R360P7SXKSA1
STFU15NM65N N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP ultra narrow leads package STMicroelectronics SIHF12N65E-GE3 vs STFU15NM65N
SPA11N60C3E8185 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Infineon Technologies AG SIHF12N65E-GE3 vs SPA11N60C3E8185
R6011ENX Power Field-Effect Transistor, 11A I(D), 600V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN ROHM Semiconductor SIHF12N65E-GE3 vs R6011ENX
SSF11NS60F Power Field-Effect Transistor, 11A I(D), 600V, 0.41ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN Suzhou Good-Ark Electronics Co Ltd SIHF12N65E-GE3 vs SSF11NS60F
SPW11N60S5FKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SIHF12N65E-GE3 vs SPW11N60S5FKSA1

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