Datasheets
SIHF530STRL-GE3 by:

TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

Part Details for SIHF530STRL-GE3 by Vishay Siliconix

Overview of SIHF530STRL-GE3 by Vishay Siliconix

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SIHF530STRL-GE3

Part # Distributor Description Stock Price Buy
DISTI # 742-SIHF530STRL-GE3CT-ND
DigiKey MOSFET N-CH 100V 14A D2PAK Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 700
In Stock
  • 1 $1.0300
  • 10 $0.8450
  • 100 $0.6575
  • 800 $0.5573
  • 1,600 $0.4540
  • 2,400 $0.4274
  • 5,600 $0.4070
  • 20,000 $0.3882
$0.3882 / $1.0300 Buy Now
DISTI # 70615640
RS SIHF530STRL-GE3 N-channel MOSFET Transistor, 14 A, 100 V, 3-Pin D2PAK | Siliconix / Vishay SIHF530STRL-GE3 RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk 0
  • 10 $1.3300
  • 100 $1.2600
  • 500 $1.2000
  • 1,000 $1.1300
$1.1300 / $1.3300 RFQ

Part Details for SIHF530STRL-GE3

SIHF530STRL-GE3 CAD Models

SIHF530STRL-GE3 Part Data Attributes

SIHF530STRL-GE3 Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SIHF530STRL-GE3 Vishay Siliconix TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 69 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 88 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHF530STRL-GE3

This table gives cross-reference parts and alternative options found for SIHF530STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF530STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF530STRRPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier SIHF530STRL-GE3 vs IRF530STRRPBF
IRF530SPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier SIHF530STRL-GE3 vs IRF530SPBF
IRF530SPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs IRF530SPBF
SIHF530STRR-GE3 TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF530STRL-GE3 vs SIHF530STRR-GE3
SIHF530STRL-GE3 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs SIHF530STRL-GE3
IRF530S Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products SIHF530STRL-GE3 vs IRF530S
IRF530STRRPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs IRF530STRRPBF
SIHF530STRR-GE3 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs SIHF530STRR-GE3
SIHF530S-GE3 TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF530STRL-GE3 vs SIHF530S-GE3
IRF530STRLPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF530STRL-GE3 vs IRF530STRLPBF
Part Number Description Manufacturer Compare
SIHF530STRL-GE3 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs SIHF530STRL-GE3
IRF530S Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products SIHF530STRL-GE3 vs IRF530S
IRF530SPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs IRF530SPBF
IRF530SPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Siliconix SIHF530STRL-GE3 vs IRF530SPBF
SIHF530STRR-GE3 TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF530STRL-GE3 vs SIHF530STRR-GE3
SIHF530S-GE3 TRANSISTOR 14 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power Vishay Siliconix SIHF530STRL-GE3 vs SIHF530S-GE3
IRF530STRRPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier SIHF530STRL-GE3 vs IRF530STRRPBF
IRF530SPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 International Rectifier SIHF530STRL-GE3 vs IRF530SPBF
SIHF530STRR-GE3 Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs SIHF530STRR-GE3
IRF530STRRPBF Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 Vishay Intertechnologies SIHF530STRL-GE3 vs IRF530STRRPBF

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