Part Details for SIHF640L-GE3 by Vishay Intertechnologies
Overview of SIHF640L-GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SIHF640L-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1000 |
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RFQ | ||
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Quest Components | 800 |
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$2.4816 / $4.5120 | Buy Now | |
DISTI #
SIHF640L-GE3
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TME | Transistor: N-MOSFET, unipolar, 200V, 11A, Idm: 72A, 130W Min Qty: 1 | 0 |
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$1.0500 / $1.5700 | RFQ |
DISTI #
SIHF640L-GE3
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EBV Elektronik | Trans MOSFET N-CH 200V 18A 3-Pin TO-262 (Alt: SIHF640L-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIHF640L-GE3
SIHF640L-GE3 CAD Models
SIHF640L-GE3 Part Data Attributes
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SIHF640L-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SIHF640L-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 580 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 18 A | |
Drain-source On Resistance-Max | 0.18 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 72 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SIHF640L-GE3
This table gives cross-reference parts and alternative options found for SIHF640L-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF640L-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SIHF640L | TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF640L-GE3 vs SIHF640L |