Part Details for SIHF640S-GE3 by Vishay Intertechnologies
Overview of SIHF640S-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for SIHF640S-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
96X2681
|
Newark | Mosfet N-Channel 200V |Vishay SIHF640S-GE3 RoHS: Not Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.9180 / $1.0300 | Buy Now |
|
DISTI #
SIHF640S-GE3
|
Avnet Americas | MOSFET N-CHANNEL 200V - Tape and Reel (Alt: SIHF640S-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
|
$0.8221 | Buy Now |
|
DISTI #
78-SIHF640S-GE3
|
Mouser Electronics | MOSFETs 200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant | 1421 |
|
$0.8370 / $1.4000 | Buy Now |
|
|
Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks | 0 |
|
$0.8820 | Buy Now |
|
DISTI #
SIHF640S-GE3
|
TTI | MOSFETs 200V Vds 20V Vgs D2PAK (TO-263) RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 1000 Container: Reel | Americas - 0 |
|
$0.8400 | Buy Now |
|
DISTI #
SIHF640S-GE3
|
TME | Transistor: N-MOSFET, unipolar, 200V, 11A, Idm: 72A, 130W Min Qty: 1 | 0 |
|
$0.6800 / $1.0200 | RFQ |
|
|
NAC | Halogen Free IRF640SPBF N channel , VBRDSS 2 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 500 |
|
$0.6700 / $0.7200 | Buy Now |
|
DISTI #
SIHF640S-GE3
|
EBV Elektronik | (Alt: SIHF640S-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 14 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
Part Details for SIHF640S-GE3
SIHF640S-GE3 CAD Models
SIHF640S-GE3 Part Data Attributes
|
|
SIHF640S-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SIHF640S-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 13 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 580 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHF640S-GE3
This table gives cross-reference parts and alternative options found for SIHF640S-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHF640S-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHF640S-GE3 vs IRF640STRL |
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | SIHF640S-GE3 vs IRF640STRLPBF |
| IRF640STRRPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHF640S-GE3 vs IRF640STRRPBF |
| IRF640S | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHF640S-GE3 vs IRF640S |
| SIHF640S-GE3 | TRANSISTOR 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power | Vishay Siliconix | SIHF640S-GE3 vs SIHF640S-GE3 |
| IRFW640B | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 | Fairchild Semiconductor Corporation | SIHF640S-GE3 vs IRFW640B |
| IRF640STRL | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | International Rectifier | SIHF640S-GE3 vs IRF640STRL |
| IRF640SPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHF640S-GE3 vs IRF640SPBF |
| IRF640STRLPBF | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Vishay Intertechnologies | SIHF640S-GE3 vs IRF640STRLPBF |
| IRF640S/T3 | TRANSISTOR 16 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SOT-404, D2PAK-3, FET General Purpose Power | NXP Semiconductors | SIHF640S-GE3 vs IRF640S/T3 |