Purchasing Risk Rank is determined by in-depth analysis across risk factors of production risk and long term risk of a given part.
SIHFR1N60A-GE3
Active
,
unknown
EAR99
Vishay Siliconix
0.61
SINGLE
1.4 A
1.4 A
METAL-OXIDE SEMICONDUCTOR
1
150 °C
N-CHANNEL
36 W
FET General Purpose Power
YES
Design Risk Rank is determined by in-depth analysis across risk factors, including part availability, functional equivalents, lifecycle, and more.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR1N60A Transistors | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | SIHFR1N60A-GE3 vs IRFR1N60A |
IRFR1N60ATR Transistors | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | SIHFR1N60A-GE3 vs IRFR1N60ATR |
SIHFR1N60A-E3 Transistors | TRANSISTOR 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR1N60A-GE3 vs SIHFR1N60A-E3 |
SIHFR1N60A Transistors | TRANSISTOR 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR1N60A-GE3 vs SIHFR1N60A |
IRFR1N60APBF Transistors | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | SIHFR1N60A-GE3 vs IRFR1N60APBF |
SIHFR1N60AT Transistors | TRANSISTOR 1.4 A, 600 V, 7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR1N60A-GE3 vs SIHFR1N60AT |
SIHFR1N60ATR-GE3 Transistors | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHFR1N60A-GE3 vs SIHFR1N60ATR-GE3 |
IRFR1N60ATRRPBF Transistors | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | SIHFR1N60A-GE3 vs IRFR1N60ATRRPBF |
IRFR1N60ATRL Transistors | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | SIHFR1N60A-GE3 vs IRFR1N60ATRL |
SIHFR1N60ATRR-GE3 Transistors | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | SIHFR1N60A-GE3 vs SIHFR1N60ATRR-GE3 |