Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Distributor Offerings: (
5 listings
)
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Number of FFF Equivalents: (
0 replacements
)
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CAD Models: (
Available
)
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Number of Functional Equivalents: (
0 options
)
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Part Data Attributes (
Available
)
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Reference Designs: (
Not Available
)
Where used in Applications:
Education and Research
Consumer Electronics
Space Technology
Aerospace and Defense
Energy and Power Systems
Renewable Energy
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Part # |
Manufacturer |
Description |
Stock |
Price |
Buy |
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Avnet Americas
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N-CHANNEL 600V - Tape and Reel (Alt: SIHG22N60AE-GE3)
RoHS:
Compliant
Min Qty:
500
Package Multiple:
500
Lead time:
18 Weeks, 0 Days
Container:
Reel
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0
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$1.8818
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Buy Now
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DISTI #
78-SIHG22N60AE-GE3
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Mouser Electronics
|
MOSFETs 600V Vds 30V Vgs TO-247AC
RoHS:
Compliant
|
380
|
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1
$3.8600
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10
$3.2400
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25
$3.0600
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100
$2.6200
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250
$2.4800
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500
$1.9400
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2,500
$1.9200
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$1.9200 / $3.8600
|
Buy Now
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Future Electronics
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RoHS:
Compliant
pbFree:
Yes
Min Qty:
500
Package Multiple:
500
Lead time:
21 Weeks
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0
|
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$1.9000
|
Buy Now
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TTI
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MOSFETs 600V Vds 30V Vgs TO-247AC
RoHS:
Compliant
pbFree:
Pb-Free
Min Qty:
500
Package Multiple:
50
Container:
Tube
|
Americas - 0
|
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500
$1.9000
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2,500
$1.8500
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5,000
$1.8000
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$1.8000 / $1.9000
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Buy Now
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TME
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Transistor: N-MOSFET, unipolar, 600V, 12A, Idm: 49A, 179W, TO247AC
Min Qty:
1
|
0
|
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1
$4.6000
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5
$4.1300
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25
$3.6500
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100
$3.2800
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500
$3.0600
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$3.0600 / $4.6000
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RFQ
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Part Symbol
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Footprint
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3D Model
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VISHAY INTERTECHNOLOGY INC
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Avalanche Energy Rating (Eas)
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SINGLE WITH BUILT-IN DIODE
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Drain-source On Resistance-Max
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METAL-OXIDE SEMICONDUCTOR
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Time@Peak Reflow Temperature-Max (s)
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Transistor Element Material
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Want to compare parts?
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Vishay Intertechnologies
Power Field-Effect Transistor,
VS
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