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Transistors Power Field-Effect Transistors SIHH21N65EF-T1-GE3

SIHH21N65EF-T1-GE3
Description: Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4

Overview of SIHH21N65EF-T1-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Available Datasheets

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Price & Stock for SIHH21N65EF-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # SIHH21N65EF-T1-GE3
Avnet Americas N-CHANNEL 650V - Tape and Reel (Alt: SIHH21N65EF-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 3,000 $3.0037
$3.0037 Buy Now
DISTI # 78-SIHH21N65EF-T1GE3
Mouser Electronics MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant 0
  • 3,000 $3.1800
$3.1800 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks 0
  • 3,000 $3.2200
$3.2200 Buy Now
DISTI # SIHH21N65EF-T1-GE3
TTI MOSFETs 650V Vds 30V Vgs PowerPAK 8 x 8 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $3.1500
$3.1500 Buy Now
DISTI # SIHH21N65EF-T1-GE3
TME Transistor: N-MOSFET, unipolar, 650V, 12.5A, Idm: 53A, 156W Min Qty: 1 0
  • 1 $7.6700
  • 5 $6.9000
  • 25 $6.1000
  • 100 $5.4800
  • 500 $5.1100
$5.1100 / $7.6700 RFQ
DISTI # SIHH21N65EF-T1-GE3
EBV Elektronik Trans MOSFET N-CH 650V 19.8A 5-Pin PowerPAK T/R (Alt: SIHH21N65EF-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SIHH21N65EF-T1-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIHH21N65EF-T1-GE3 by Vishay Intertechnologies
Parametric Data

SIHH21N65EF-T1-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, S-PSSO-N4
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
18 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
353 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
650 V
Drain Current-Max (ID)
19.8 A
Drain-source On Resistance-Max
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
S-PSSO-N4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
53 A
Surface Mount
YES
Terminal Form
NO LEAD
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIHH21N65EF-T1-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 19.8A I(D), 650V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4
    VS

Alternate Parts for SIHH21N65EF-T1-GE3

This table gives cross-reference parts and alternative options found for SIHH21N65EF-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHH21N65EF-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXKP20N60C5 Power Field-Effect Transistor, Littelfuse Inc SIHH21N65EF-T1-GE3 vs IXKP20N60C5
IPB60R190C6ATMA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHH21N65EF-T1-GE3 vs IPB60R190C6ATMA1
STP28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package STMicroelectronics SIHH21N65EF-T1-GE3 vs STP28N65M2
IXKH20N60C5 Power Field-Effect Transistor, 20A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation SIHH21N65EF-T1-GE3 vs IXKH20N60C5
APT20N60KC3 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AC, 3 PIN Advanced Power Technology SIHH21N65EF-T1-GE3 vs APT20N60KC3
IPB60R190C6XT Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG SIHH21N65EF-T1-GE3 vs IPB60R190C6XT
R6020ENJTL Power Field-Effect Transistor, 20A I(D), 600V, 0.196ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, LPTS, SC-83, 3/2 PIN ROHM Semiconductor SIHH21N65EF-T1-GE3 vs R6020ENJTL
STB28N65M2 N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package STMicroelectronics SIHH21N65EF-T1-GE3 vs STB28N65M2
TK20E60U TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components SIHH21N65EF-T1-GE3 vs TK20E60U
RJK60S5DPK-M0-T0 20A, 600V, 0.178ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PSG, 3 PIN Renesas Electronics Corporation SIHH21N65EF-T1-GE3 vs RJK60S5DPK-M0-T0

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