There are no models available for this part yet.
Overview of SIHL510STRL-GE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 8 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 8 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for SIHL510STRL-GE3 by Vishay Intertechnologies
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Bristol Electronics | 630 |
|
RFQ | ||||
| Quest Components | 504 |
|
$0.6496 / $1.6240 | Buy Now | |||
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DISTI #
SIHL510STRL-GE3
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TME | Transistor: N-MOSFET, unipolar, 100V, 4A, Idm: 18A, 43W, D2PAK,TO263 Min Qty: 1 | 0 |
|
$0.4160 / $0.8010 | RFQ | |
|
DISTI #
SIHL510STRL-GE3
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EBV Elektronik | (Alt: SIHL510STRL-GE3) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 9 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for SIHL510STRL-GE3 by Vishay Intertechnologies
Part Data Attributes for SIHL510STRL-GE3 by Vishay Intertechnologies
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|---|---|
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Active
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Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Samacsys Manufacturer
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Vishay
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Additional Feature
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AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
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Avalanche Energy Rating (Eas)
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100 mJ
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Case Connection
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DRAIN
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Configuration
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SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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5.6 A
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Drain-source On Resistance-Max
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0.54 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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TO-263AB
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JESD-30 Code
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R-PSSO-G2
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Number of Elements
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1
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Number of Terminals
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2
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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175 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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43 W
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Pulsed Drain Current-Max (IDM)
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18 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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SINGLE
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Time@Peak Reflow Temperature-Max (s)
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40
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for SIHL510STRL-GE3
This table gives cross-reference parts and alternative options found for SIHL510STRL-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHL510STRL-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRL510STRR | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL510STRL-GE3 vs IRL510STRR |
| IRL510STRL | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL510STRL-GE3 vs IRL510STRL |
| IRL510SPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL510STRL-GE3 vs IRL510SPBF |
| IRL510STRLPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | Vishay Intertechnologies | SIHL510STRL-GE3 vs IRL510STRLPBF |
| IRL510S | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL510STRL-GE3 vs IRL510S |
| IRL510STRLPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | Vishay Siliconix | SIHL510STRL-GE3 vs IRL510STRLPBF |
| IRL510S | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | Vishay Intertechnologies | SIHL510STRL-GE3 vs IRL510S |
| IRL510STRLPBF | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | International Rectifier | SIHL510STRL-GE3 vs IRL510STRLPBF |