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Transistors / Power Field-Effect Transistors / SIHP8N50D-GE3
Datasheets
SIHP8N50D-GE3 by:

Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3

Part Details for SIHP8N50D-GE3 by Vishay Intertechnologies

Overview of SIHP8N50D-GE3 by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SIHP8N50D-GE3

Part # Distributor Description Stock Price Buy
DISTI # 08X3793
Newark Mosfet, N Channel, 500V, 8.7A, To-220Ab-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SIHP8N50D-GE3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.7940
$0.7940 Buy Now
DISTI # 99W9515
Newark Mosfet, N-Ch, 500V, 8.7A, To-220Ab-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:8.7A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Power Dissipation:156W, Msl:- Rohs Compliant: Yes |Vishay SIHP8N50D-GE3 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,000 $0.7010
  • 2,000 $0.6360
  • 4,000 $0.5710
  • 6,000 $0.5510
  • 10,000 $0.5390
$0.5390 / $0.7010 Buy Now
DISTI # SIHP8N50D-GE3
Avnet Americas N-CHANNEL 500V - Tape and Reel (Alt: SIHP8N50D-GE3) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
  • 1,000 $0.4971
$0.4971 Buy Now
Future Electronics D Series MOSFET N-CHANNEL 500V RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Tube 0
Tube
  • 1,000 $1.1200
  • 2,000 $1.1000
  • 3,000 $1.0900
  • 4,000 $1.0900
  • 5,000 $1.0700
$1.0700 / $1.1200 Buy Now
Bristol Electronics   5000
RFQ
Quest Components   4000
  • 1 $2.0280
  • 987 $0.7098
  • 2,114 $0.6084
$0.6084 / $2.0280 Buy Now
DISTI # SIHP8N50D-GE3
TME Transistor: N-MOSFET, unipolar, 500V, 5.5A, Idm: 18A, 156W, TO220AB Min Qty: 1 0
  • 1 $1.3200
  • 10 $1.1100
  • 50 $0.9400
  • 100 $0.8700
  • 250 $0.7800
  • 500 $0.7100
  • 1,000 $0.6900
$0.6900 / $1.3200 RFQ
DISTI # SIHP8N50D-GE3
EBV Elektronik Trans MOSFET N-CH 500V 8.7A 3-Pin(3+Tab) TO-220AB (Alt: SIHP8N50D-GE3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SIHP8N50D-GE3

SIHP8N50D-GE3 CAD Models

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SIHP8N50D-GE3 Part Data Attributes

Parametric Data
SIHP8N50D-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SIHP8N50D-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 29 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 8.7 A
Drain-source On Resistance-Max 0.85 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 18 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SIHP8N50D-GE3

This table gives cross-reference parts and alternative options found for SIHP8N50D-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHP8N50D-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB8NC50T4 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics SIHP8N50D-GE3 vs STB8NC50T4
IRF840AJ69Z Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation SIHP8N50D-GE3 vs IRF840AJ69Z
FMP08N50E Power Field-Effect Transistor, 7.5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fuji Electric Co Ltd SIHP8N50D-GE3 vs FMP08N50E
UF840-TA3-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Unisonic Technologies Co Ltd SIHP8N50D-GE3 vs UF840-TA3-T
UF840-TQ2-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Unisonic Technologies Co Ltd SIHP8N50D-GE3 vs UF840-TQ2-T
UF840L-TQ2-T Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd SIHP8N50D-GE3 vs UF840L-TQ2-T
SIHP8N50D-E3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix SIHP8N50D-GE3 vs SIHP8N50D-E3
PJP840 Power Field-Effect Transistor, 8A I(D), 500V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 PanJit Semiconductor SIHP8N50D-GE3 vs PJP840
IRF840SU Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, I2PAK-3 Fairchild Semiconductor Corporation SIHP8N50D-GE3 vs IRF840SU
STD5NM50-1 7.5A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 STMicroelectronics SIHP8N50D-GE3 vs STD5NM50-1

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