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Transistors Power Field-Effect Transistors SIR466DP-T1-GE3

SIR466DP-T1-GE3
Description: Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

Overview of SIR466DP-T1-GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Available Datasheets

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Price & Stock for SIR466DP-T1-GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 97W2609
Newark Mosfet Transistor, N Channel, 40 A, 30 V, 0.0029 Ohm, 10 V, 2.4 V Rohs Compliant: Yes |Vishay SIR466DP-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 3635
  • 1 $1.1500
  • 10 $0.9650
  • 25 $0.9040
  • 50 $0.8420
  • 100 $0.7810
  • 500 $0.6810
$0.6810 / $1.1500 Buy Now
DISTI # 69W7165
Newark Mosfet, N Channel, 30V, 40A, Soic-8, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, On Resistance Rds(On):0.0029Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay SIR466DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.7170
$0.7170 Buy Now
DISTI # 16P3653
Newark N Channel Mosfet, 30V, 40A, Soic, Full Reel, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, On Resistance Rds(On):0.0029Ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:2.4Vrohs Compliant: Yes |Vishay SIR466DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.5570
$0.5570 Buy Now
DISTI # 79AH6492
Newark N-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIR466DP-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3540
$0.3540 Buy Now
DISTI # SIR466DP-T1-GE3
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIR466DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 12000
  • 3,000 $0.3538
$0.3538 Buy Now
DISTI # 781-SIR466DP-T1-GE3
Mouser Electronics MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant 5565
  • 1 $1.0600
  • 10 $0.8730
  • 100 $0.6880
  • 500 $0.5880
  • 1,000 $0.4820
  • 3,000 $0.4600
  • 6,000 $0.4460
  • 9,000 $0.4260
$0.4260 / $1.0600 Buy Now
Future Electronics Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks Container: Reel 0
Reel
  • 3,000 $0.3650
  • 6,000 $0.3550
  • 9,000 $0.3550
  • 12,000 $0.3450
$0.3450 / $0.3650 Buy Now
Future Electronics Single N-Channel 30 V 3.5 mOhms Surface Mount Power Mosfet - PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.3650
  • 6,000 $0.3550
  • 9,000 $0.3550
  • 12,000 $0.3450
$0.3450 / $0.3650 Buy Now
Bristol Electronics   43
RFQ
DISTI # SIR466DP-T1-GE3
TTI MOSFETs 30V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 12000
In Stock
  • 3,000 $0.4440
  • 9,000 $0.4220
$0.4220 / $0.4440 Buy Now
DISTI # SIR466DP-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 40A, Idm: 70A, 54W Min Qty: 3000 0
  • 3,000 $0.6540
$0.6540 RFQ
DISTI # SMC-SIR466DP-T1-GE3
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 260
RFQ
DISTI # SIR466DP-T1-GE3
Avnet Asia N-CHANNEL 30-V (D-S) MOSFET (Alt: SIR466DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 21 Weeks, 0 Days 0
RFQ
DISTI # C1S803601046985
Chip1Stop MOSFET RoHS: Compliant 3000
  • 3,000 $0.4870
$0.4870 Buy Now
DISTI # C1S803601730783
Chip1Stop MOSFET RoHS: Compliant 2468
  • 1 $0.6710
  • 10 $0.5753
  • 25 $0.5723
  • 100 $0.5057
  • 250 $0.5006
  • 500 $0.4583
  • 1,000 $0.4230
$0.4230 / $0.6710 Buy Now
DISTI # SIR466DP-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 28A 8-Pin PowerPAK SO T/R (Alt: SIR466DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 40A 3.5m10V15A 2.4V250uA 1 N-Channel PowerPAK-SO-8 MOSFETs ROHS 2890
  • 1 $0.5890
  • 10 $0.4806
  • 30 $0.4272
  • 100 $0.3738
  • 500 $0.3424
  • 1,000 $0.3267
$0.3267 / $0.5890 Buy Now

CAD Models for SIR466DP-T1-GE3 by Vishay Intertechnologies
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Part Data Attributes for SIR466DP-T1-GE3 by Vishay Intertechnologies
Parametric Data

SIR466DP-T1-GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
45 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
28 A
Drain-source On Resistance-Max
0.0035 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XDSO-C5
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
5
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
UNSPECIFIED
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
54 W
Pulsed Drain Current-Max (IDM)
70 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
C BEND
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. SIR466DP-T1-GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
    VS

Alternate Parts for SIR466DP-T1-GE3

This table gives cross-reference parts and alternative options found for SIR466DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR466DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SI7788DP-T1-GE3 Power Field-Effect Transistor, 29.5A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR466DP-T1-GE3 vs SI7788DP-T1-GE3
SI5458DU-T1-GE3 Power Field-Effect Transistor, 6A I(D), 30V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, CHIPFET-8 Vishay Intertechnologies SIR466DP-T1-GE3 vs SI5458DU-T1-GE3
SI7856ADP-T1-E3 TRANSISTOR 15 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8, FET General Purpose Power Vishay Siliconix SIR466DP-T1-GE3 vs SI7856ADP-T1-E3
SI7170DP-T1-GE3 Power Field-Effect Transistor, 28.5A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 Vishay Intertechnologies SIR466DP-T1-GE3 vs SI7170DP-T1-GE3
SI7856ADP-T1-E3 Power Field-Effect Transistor, 15A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies SIR466DP-T1-GE3 vs SI7856ADP-T1-E3

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