Part Details for SIR862DP-T1-GE3 by Vishay Intertechnologies
Overview of SIR862DP-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Aerospace and Defense
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for SIR862DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
86R3810
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Newark | N-Channel 25-V (D-S) Mosfet |Vishay SIR862DP-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5460 / $0.6440 | Buy Now |
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DISTI #
SIR862DP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 25V 32A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR862DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5535 / $0.7032 | Buy Now |
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DISTI #
78-SIR862DP-T1-GE3
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Mouser Electronics | MOSFET 25V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant | 5370 |
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$0.5130 / $1.3600 | Buy Now |
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Future Electronics | N Channel 25 V 50 A 2.8 mΩ 28.4 nC Surface Mount Mosfet -PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5150 / $0.5350 | Buy Now |
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Future Electronics | N Channel 25 V 50 A 2.8 mΩ 28.4 nC Surface Mount Mosfet -PowerPAK SO-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5150 / $0.5350 | Buy Now |
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DISTI #
SIR862DP-T1-GE3
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TTI | MOSFET 25V Vds 20V Vgs PowerPAK SO-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel | Americas - 0 |
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$0.5130 / $0.5410 | Buy Now |
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DISTI #
SIR862DP-T1-GE3
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TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 25V, 50A, Idm: 70A, 69W Min Qty: 3000 | 0 |
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$0.8400 | RFQ |
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DISTI #
SIR862DP-T1-GE3
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EBV Elektronik | (Alt: SIR862DP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SIR862DP-T1-GE3
SIR862DP-T1-GE3 CAD Models
SIR862DP-T1-GE3 Part Data Attributes:
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SIR862DP-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIR862DP-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 50A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 80 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 50 A | |
| Drain-source On Resistance-Max | 0.0028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XDSO-C5 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 69 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIR862DP-T1-GE3
This table gives cross-reference parts and alternative options found for SIR862DP-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIR862DP-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI7738DP-T1-E3 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SI7738DP-T1-E3 |
| SIR426DP-T1-GE3 | Power Field-Effect Transistor, 30A I(D), 40V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SIR426DP-T1-GE3 |
| SI7738DP-T1-GE3 | Power Field-Effect Transistor, 7.7A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SI7738DP-T1-GE3 |
| BSC093N04LSG | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | SIR862DP-T1-GE3 vs BSC093N04LSG |
| SIR804DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 100V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SIR804DP-T1-GE3 |
| BSC093N04LSGATMA1 | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, MO-240, TDSON-8 | Infineon Technologies AG | SIR862DP-T1-GE3 vs BSC093N04LSGATMA1 |
| BSC059N04LSGATMA1 | Power Field-Effect Transistor, 16A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR862DP-T1-GE3 vs BSC059N04LSGATMA1 |
| SIR880DP-T1-GE3 | Power Field-Effect Transistor, 60A I(D), 80V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SIR880DP-T1-GE3 |
| SIR166DP-T1-GE3 | Power Field-Effect Transistor, 40A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8 | Vishay Intertechnologies | SIR862DP-T1-GE3 vs SIR166DP-T1-GE3 |
| BSC360N15NS3G | Power Field-Effect Transistor, 33A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | SIR862DP-T1-GE3 vs BSC360N15NS3G |