Part Details for SIRA12DP-T1-GE3 by Vishay Siliconix
Overview of SIRA12DP-T1-GE3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Security and Surveillance
Industrial Automation
Automotive
Robotics and Drones
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| FIDO5100BBCZ | Analog Devices | REM Switch | |
| FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
| ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SIRA12DP-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SIRA12DP-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 25A PPAK SO-8 Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5382 In Stock |
|
$0.3038 / $1.3400 | Buy Now |
|
DISTI #
70243887
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RS | Semiconcuctor, Mosfet, TrenchFET, N-Channel, 30V, 25A, 4.3mohm @ 10V, PowerPAK SO-8 | Siliconix / Vishay SIRA12DP-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5300 / $0.6200 | RFQ |
|
|
Chip 1 Exchange | INSTOCK | 19007 |
|
RFQ |
Part Details for SIRA12DP-T1-GE3
SIRA12DP-T1-GE3 CAD Models
SIRA12DP-T1-GE3 Part Data Attributes
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SIRA12DP-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SIRA12DP-T1-GE3
Vishay Siliconix
TRANSISTOR POWER, FET, FET General Purpose Power
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Package Description | SMALL OUTLINE, R-PDSO-C5 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 11 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.0043 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-C5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 31 W | |
| Pulsed Drain Current-Max (IDM) | 80 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | C BEND | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |