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Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X1956
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Newark | Mosfet, N-Ch, 30V, 38.3A, Powerpak 1212, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:38.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SISA18ADN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 241 |
|
$0.1260 | Buy Now |
DISTI #
99W9573
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Newark | Mosfet Transistor, N Channel, 38.3 A, 30 V, 0.006 Ohm, 10 V, 1.2 V |Vishay SISA18ADN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1850 / $0.2470 | Buy Now |
DISTI #
19X1956
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Avnet Americas | N-CHANNEL 30-V-(D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 19X1956) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack | 241 Partner Stock |
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$0.1820 / $0.6530 | Buy Now |
DISTI #
SISA18ADN-T1-GE3
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Avnet Americas | N-CHANNEL 30-V-(D-S) MOSFET - Tape and Reel (Alt: SISA18ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.1718 | Buy Now |
DISTI #
78-SISA18ADN-T1-GE3
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Mouser Electronics | MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 43841 |
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$0.1700 / $0.6200 | Buy Now |
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Future Electronics | MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.1720 / $0.1840 | Buy Now |
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Future Electronics | MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.1720 / $0.1840 | Buy Now |
DISTI #
84420898
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Verical | Trans MOSFET N-CH 30V 38.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2434 | Americas - 3000 |
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$0.2878 | Buy Now |
DISTI #
SISA18ADN-T1-GE3
|
TTI | MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 9000 In Stock |
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$0.1750 | Buy Now |
DISTI #
SISA18ADN-T1-GE3
|
TME | Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 30.6A, Idm: 70A Min Qty: 1 | 0 |
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$0.2700 / $0.8090 | RFQ |
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SISA18ADN-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SISA18ADN-T1-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 18 Weeks, 3 Days | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 38.3 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-C5 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 19.8 W | |
Pulsed Drain Current-Max (IDM) | 70 A | |
Surface Mount | YES | |
Terminal Form | C BEND | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |