Datasheets
SISA18ADN-T1-GE3 by:

Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for SISA18ADN-T1-GE3 by Vishay Intertechnologies

Overview of SISA18ADN-T1-GE3 by Vishay Intertechnologies

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Price & Stock for SISA18ADN-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 19X1956
Newark Mosfet, N-Ch, 30V, 38.3A, Powerpak 1212, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:38.3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.4V Rohs Compliant: Yes |Vishay SISA18ADN-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 241
  • 1 $0.1260
  • 25 $0.1260
  • 100 $0.1260
  • 500 $0.1260
  • 1,000 $0.1260
  • 2,500 $0.1260
  • 10,000 $0.1260
  • 25,000 $0.1260
$0.1260 Buy Now
DISTI # 99W9573
Newark Mosfet Transistor, N Channel, 38.3 A, 30 V, 0.006 Ohm, 10 V, 1.2 V |Vishay SISA18ADN-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.2470
  • 5,000 $0.2410
  • 10,000 $0.2230
  • 20,000 $0.2080
  • 30,000 $0.1940
  • 50,000 $0.1850
$0.1850 / $0.2470 Buy Now
DISTI # 19X1956
Avnet Americas N-CHANNEL 30-V-(D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 19X1956) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks, 3 Days Container: Ammo Pack 241 Partner Stock
  • 1 $0.6530
  • 25 $0.5220
  • 100 $0.3140
  • 500 $0.2480
  • 1,000 $0.1820
$0.1820 / $0.6530 Buy Now
DISTI # SISA18ADN-T1-GE3
Avnet Americas N-CHANNEL 30-V-(D-S) MOSFET - Tape and Reel (Alt: SISA18ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1718
$0.1718 Buy Now
DISTI # 78-SISA18ADN-T1-GE3
Mouser Electronics MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant 43841
  • 1 $0.6200
  • 10 $0.4940
  • 100 $0.2270
  • 500 $0.1750
  • 3,000 $0.1750
  • 45,000 $0.1700
$0.1700 / $0.6200 Buy Now
Future Electronics MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 3000
Reel
  • 3,000 $0.1840
  • 6,000 $0.1800
  • 9,000 $0.1780
  • 12,000 $0.1760
  • 15,000 $0.1720
$0.1720 / $0.1840 Buy Now
Future Electronics MOSFET 30V 7.5MOHM@10V 18A N-CH G-IV RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks Container: Reel 0
Reel
  • 3,000 $0.1840
  • 6,000 $0.1800
  • 9,000 $0.1780
  • 12,000 $0.1760
  • 15,000 $0.1720
$0.1720 / $0.1840 Buy Now
DISTI # 84420898
Verical Trans MOSFET N-CH 30V 38.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Date Code: 2434 Americas - 3000
  • 3,000 $0.2878
$0.2878 Buy Now
DISTI # SISA18ADN-T1-GE3
TTI MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 9000
In Stock
  • 3,000 $0.1750
$0.1750 Buy Now
DISTI # SISA18ADN-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 30V, 30.6A, Idm: 70A Min Qty: 1 0
  • 1 $0.8090
  • 5 $0.3770
  • 25 $0.3390
  • 100 $0.3000
  • 500 $0.2700
$0.2700 / $0.8090 RFQ
DISTI # SISA18ADN-T1-GE3
Avnet Asia N-CHANNEL 30-V-(D-S) MOSFET (Alt: SISA18ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days 15000
RFQ
DISTI # C1S803603998354
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 3000
  • 3,000 $0.2010
$0.2010 Buy Now
DISTI # C1S803604227138
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes 13
  • 10 $0.2960
$0.2960 Buy Now
DISTI # SISA18ADN-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 15.3A 8-Pin PowerPAK 1212 T/R (Alt: SISA18ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 38.3A 7.5m10V10A 2.4V250uA 1 N-Channel PowerPAK1212-8 MOSFETs ROHS 1274
  • 5 $0.1765
  • 50 $0.1544
  • 150 $0.1449
  • 500 $0.1204
  • 3,000 $0.1151
  • 6,000 $0.1119
$0.1119 / $0.1765 Buy Now

Part Details for SISA18ADN-T1-GE3

SISA18ADN-T1-GE3 CAD Models

SISA18ADN-T1-GE3 Part Data Attributes

SISA18ADN-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SISA18ADN-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
Factory Lead Time 18 Weeks, 3 Days
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 5 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 38.3 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-C5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 19.8 W
Pulsed Drain Current-Max (IDM) 70 A
Surface Mount YES
Terminal Form C BEND
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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