Part Details for SKW15N60 by Infineon Technologies AG
Overview of SKW15N60 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for SKW15N60
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ComSIT USA | FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON DIODE Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC RoHS: Not Compliant | Europe - 581 |
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RFQ |
Part Details for SKW15N60
SKW15N60 CAD Models
SKW15N60 Part Data Attributes
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SKW15N60
Infineon Technologies AG
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Datasheet
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SKW15N60
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AC, GREEN, PLASTIC PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | TO-247AC | |
| Package Description | GREEN, PLASTIC PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 31 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 65 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 28 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | MOTOR CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 315 ns | |
| Turn-on Time-Nom (ton) | 54 ns |
Alternate Parts for SKW15N60
This table gives cross-reference parts and alternative options found for SKW15N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SKW15N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| HGTG40N60B3 | 70A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | SKW15N60 vs HGTG40N60B3 |
| BUP402 | Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN | Siemens | SKW15N60 vs BUP402 |
| HGT1S12N60B3S9A | 27A, 600V, N-CHANNEL IGBT, TO-263AB | Intersil Corporation | SKW15N60 vs HGT1S12N60B3S9A |
| IRG4BC30UDPBF | Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | SKW15N60 vs IRG4BC30UDPBF |
| IRG4PC50FDPBF | Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3 | International Rectifier | SKW15N60 vs IRG4PC50FDPBF |
| IRG4BC30F | Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SKW15N60 vs IRG4BC30F |
| IRG4BC15UD-SPBF | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | SKW15N60 vs IRG4BC15UD-SPBF |
| HGTP3N60A4D | 17A, 600V, N-CHANNEL IGBT, TO-220AB | Intersil Corporation | SKW15N60 vs HGTP3N60A4D |
| SGP30N60 | Insulated Gate Bipolar Transistor, 41A I(C), 600V V(BR)CES, N-Channel, TO-220AB | Siemens | SKW15N60 vs SGP30N60 |
| HGTG12N60C3D | 24A, 600V, N-CHANNEL IGBT, TO-247 | Intersil Corporation | SKW15N60 vs HGTG12N60C3D |