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SMAJ7.0ATR by:

Trans Voltage Suppressor Diode,

Part Details for SMAJ7.0ATR by Sangdest Microelectronics (Nanjing) Co Ltd

Overview of SMAJ7.0ATR by Sangdest Microelectronics (Nanjing) Co Ltd

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Part Details for SMAJ7.0ATR

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SMAJ7.0ATR Part Data Attributes

SMAJ7.0ATR Sangdest Microelectronics (Nanjing) Co Ltd
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SMAJ7.0ATR Sangdest Microelectronics (Nanjing) Co Ltd Trans Voltage Suppressor Diode,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Date Of Intro 2018-08-30
Additional Feature EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 8.6 V
Breakdown Voltage-Min 7.78 V
Breakdown Voltage-Nom 8.19 V
Clamping Voltage-Max 12 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 400 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL
Power Dissipation-Max 3.3 W
Reference Standard MIL-STD-750
Rep Pk Reverse Voltage-Max 7 V
Reverse Current-Max 200 µA
Reverse Test Voltage 7 V
Surface Mount YES
Technology AVALANCHE
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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