Part Details for SP000881160 by Infineon Technologies AG
Overview of SP000881160 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for SP000881160
SP000881160 CAD Models
SP000881160 Part Data Attributes
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SP000881160
Infineon Technologies AG
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Datasheet
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SP000881160
Infineon Technologies AG
Power Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 484 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 650 V | |
| Drain Current-Max (ID) | 17.5 A | |
| Drain-source On Resistance-Max | 0.19 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 57.2 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SP000881160
This table gives cross-reference parts and alternative options found for SP000881160. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP000881160, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHP18N60E-GE3 | Power Field-Effect Transistor, 18A I(D), 600V, 0.202ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | SP000881160 vs SIHP18N60E-GE3 |
| STW24NM60N | N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-247 | STMicroelectronics | SP000881160 vs STW24NM60N |
| SIHB18N60E-GE3 | Power Field-Effect Transistor, 18A I(D), 600V, 0.202ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 | Vishay Intertechnologies | SP000881160 vs SIHB18N60E-GE3 |
| STB21NM60ND | N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in D2PAK package | STMicroelectronics | SP000881160 vs STB21NM60ND |