Part Details for SPD04N80C3BT by Infineon Technologies AG
Overview of SPD04N80C3BT by Infineon Technologies AG
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Part Details for SPD04N80C3BT
SPD04N80C3BT CAD Models
SPD04N80C3BT Part Data Attributes
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SPD04N80C3BT
Infineon Technologies AG
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Datasheet
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SPD04N80C3BT
Infineon Technologies AG
Power Field-Effect Transistor
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 800 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 1.3 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SPD04N80C3BT
This table gives cross-reference parts and alternative options found for SPD04N80C3BT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD04N80C3BT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SPD04N80C3AT | Power Field-Effect Transistor | Infineon Technologies AG | SPD04N80C3BT vs SPD04N80C3AT |
| SPD04N80C3ATMA1 | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | SPD04N80C3BT vs SPD04N80C3ATMA1 |
| SPD04N80C3BTMA1 | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | SPD04N80C3BT vs SPD04N80C3BTMA1 |