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Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47W3761
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Newark | Mosfet, P Channel, 60V, 18.6A, To-252, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:18.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon SPD18P06PGBTMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.6210 / $1.3300 | Buy Now |
DISTI #
SPD18P06PGBTMA1CT-ND
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DigiKey | MOSFET P-CH 60V 18.6A TO252-3 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7375 In Stock |
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$0.5127 / $1.3600 | Buy Now |
DISTI #
SPD18P06PGBTMA1
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Avnet Americas | Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252 - Tape and Reel (Alt: SPD18P06PGBTMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 20 Weeks, 0 Days Container: Reel | 2500 |
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$0.4606 / $0.5630 | Buy Now |
DISTI #
726-SPD18P06PGBTMA1
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Mouser Electronics | MOSFET P-Ch -60V -18.6A DPAK-2 RoHS: Compliant | 67585 |
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$0.5230 / $1.2100 | Buy Now |
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Future Electronics | Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Container: Reel | 2500Reel |
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$0.4350 / $0.4550 | Buy Now |
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Future Electronics | Single P-Channel 60 V 130 mOhm 22 nC SIPMOS® Power Mosfet - DPAK RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 22 Weeks Container: Reel | 0Reel |
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$0.4350 / $0.4550 | Buy Now |
DISTI #
SPD18P06PGBTMA1
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TME | Transistor: P-MOSFET, unipolar, -60V, -18.6A, 80W, PG-TO252-3 Min Qty: 1 | 2456 |
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$0.6900 / $1.1000 | Buy Now |
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Ameya Holding Limited | Min Qty: 2500 | 80 |
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$0.9028 | Buy Now |
DISTI #
SP000443926
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EBV Elektronik | Power MOSFET, P Channel, 60 V, 18.6 A, 0.1 ohm, TO-252 (DPAK), Surface Mount (Alt: SP000443926) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days | EBV - 107500 |
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Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 5000 |
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$0.5733 / $0.6143 | Buy Now |
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SPD18P06PGBTMA1
Infineon Technologies AG
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Datasheet
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Compare Parts:
SPD18P06PGBTMA1
Infineon Technologies AG
Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-252AB | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18.6 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 74.4 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPD18P06PGBTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD18P06PGBTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPD18P06PGBT | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SPD18P06PGBTMA1 vs SPD18P06PGBT |
SPD18P06PGXT | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SPD18P06PGBTMA1 vs SPD18P06PGXT |
SPP18P06PHXK | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPD18P06PGBTMA1 vs SPP18P06PHXK |
SPP18P06PHXKSA1 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPD18P06PGBTMA1 vs SPP18P06PHXKSA1 |
SPP18P06PG | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPD18P06PGBTMA1 vs SPP18P06PG |