Part Details for SPI80N04S2-04 by Infineon Technologies AG
Overview of SPI80N04S2-04 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SPI80N04S2-04
SPI80N04S2-04 CAD Models
SPI80N04S2-04 Part Data Attributes
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SPI80N04S2-04
Infineon Technologies AG
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Datasheet
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SPI80N04S2-04
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-262AA | |
Package Description | IN-LINE, R-PSIP-T3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 80 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-262AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 320 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for SPI80N04S2-04
This table gives cross-reference parts and alternative options found for SPI80N04S2-04. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPI80N04S2-04, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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AP3R604AGH-HF | TRANSISTOR 75 A, 40 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Power | Advanced Power Electronics Corp | SPI80N04S2-04 vs AP3R604AGH-HF |
AP9963AGP-HF | TRANSISTOR 80 A, 40 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SPI80N04S2-04 vs AP9963AGP-HF |
IPI80N04S2-0H4 | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SPI80N04S2-04 vs IPI80N04S2-0H4 |
IPI80N04S204XK | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SPI80N04S2-04 vs IPI80N04S204XK |
AP9963GS-HF | TRANSISTOR 80 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SPI80N04S2-04 vs AP9963GS-HF |
SSFT4004 | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Suzhou Good-Ark Electronics Co Ltd | SPI80N04S2-04 vs SSFT4004 |
AP9963AGS-HF | TRANSISTOR 80 A, 40 V, 0.0042 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power | Advanced Power Electronics Corp | SPI80N04S2-04 vs AP9963AGS-HF |
SPI80N04S2-H4 | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | SPI80N04S2-04 vs SPI80N04S2-H4 |
IPB80N04S4-04 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPI80N04S2-04 vs IPB80N04S4-04 |
IPP80N04S2H4XK | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPI80N04S2-04 vs IPP80N04S2H4XK |