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Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPP04N80C3
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Mouser Electronics | MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3 RoHS: Compliant | 900 |
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$0.6970 / $1.6500 | Buy Now |
DISTI #
SPP04N80C3
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TME | Transistor: N-MOSFET, unipolar, 800V, 4A, 63W, PG-TO220-3 Min Qty: 1 | 486 |
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$1.2600 / $1.8100 | Buy Now |
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LCSC | 800V 4A 1.310V2.5A 63W 3.9V240uA 1 N-Channel TO-220 MOSFETs ROHS | 1 |
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$0.6785 / $1.1481 | Buy Now |
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SPP04N80C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP04N80C3
Infineon Technologies AG
Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 170 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 1.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Pulsed Drain Current-Max (IDM) | 12 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPP04N80C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP04N80C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | SPP04N80C3 vs NDB706AL |
IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPP04N80C3 vs IPB80N06S2LH5ATMA1 |
STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | SPP04N80C3 vs STH8NA60FI |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | SPP04N80C3 vs IXFH14N80 |
IXFH7N90Q | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | SPP04N80C3 vs IXFH7N90Q |
STW80NF55-06 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | SPP04N80C3 vs STW80NF55-06 |
STP19N06 | 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | SPP04N80C3 vs STP19N06 |
STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | SPP04N80C3 vs STD5NE10T4 |
NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | SPP04N80C3 vs NDB705BEL |
STD12N05-1 | 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STMicroelectronics | SPP04N80C3 vs STD12N05-1 |