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Transistors Power Field-Effect Transistors SPP04N80C3XKSA1

Transistors
SPP04N80C3XKSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN

Overview of SPP04N80C3XKSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 8 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SPP04N80C3XKSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # 85X7429
Newark Mosfet Transistor, N Channel, 4 A, 800 V, 1.1 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon SPP04N80C3XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 499
  • 1 $1.4700
  • 10 $1.1500
  • 100 $0.9740
  • 500 $0.8720
  • 1,000 $0.7290
  • 2,500 $0.7270
  • 5,000 $0.7240
$0.7240 / $1.4700 Buy Now
DISTI # SPP04N80C3XKSA1-ND
DigiKey MOSFET N-CH 800V 4A TO220-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube 511
In Stock
  • 1 $2.3600
  • 50 $1.1536
  • 100 $1.0362
  • 500 $0.8301
  • 1,000 $0.7637
  • 2,000 $0.7079
  • 5,000 $0.6905
$0.6905 / $2.3600 Buy Now
DISTI # SPP04N80C3XKSA1
Avnet Americas Trans MOSFET N-CH 800V 4A 3-Pin TO-220AB Tube - Rail/Tube (Alt: SPP04N80C3XKSA1) RoHS: Compliant Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks, 0 Days Container: Tube 0
  • 500 $1.1591
$1.1591 Buy Now
DISTI # 726-SPP04N80C3XKSA1
Mouser Electronics MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3 RoHS: Compliant 500
  • 1 $1.9400
  • 10 $1.4200
  • 100 $1.0300
  • 250 $1.0200
  • 500 $0.8380
  • 1,000 $0.7150
  • 5,000 $0.6900
$0.6900 / $1.9400 Buy Now
Future Electronics Single N-Channel 800 V 1.3 Ohm 23 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks Container: Tube 500
Tube
  • 1 $0.7450
  • 1,000 $0.7300
  • 2,000 $0.7150
  • 2,500 $0.7100
  • 7,500 $0.6750
$0.6750 / $0.7450 Buy Now
Future Electronics Single N-Channel 800 V 1.3 Ohm 23 nC CoolMOS™ Power Mosfet - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 500 Package Multiple: 50 Lead time: 15 Weeks Container: Tube 0
Tube
  • 50 $0.8050
  • 200 $0.7700
  • 750 $0.7350
  • 2,000 $0.7150
  • 5,000 $0.6750
$0.6750 / $0.8050 Buy Now
DISTI # SP000683152
EBV Elektronik Trans MOSFET N-CH 800V 4A 3-Pin TO-220AB Tube (Alt: SP000683152) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Single N-Channel 800 V 1.3 Ohm 23 nC CoolMOS� Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 400
  • 167 $0.8571
  • 400 $0.8000
$0.8000 / $0.8571 Buy Now

CAD Models for SPP04N80C3XKSA1 by Infineon Technologies AG
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There are no models available for this part yet.

Part Data Attributes for SPP04N80C3XKSA1 by Infineon Technologies AG
Parametric Data

SPP04N80C3XKSA1
Infineon Technologies AG
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
15 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH VOLTAGE
Avalanche Energy Rating (Eas)
170 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
4 A
Drain-source On Resistance-Max
1.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
12 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Tin (Sn)
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. SPP04N80C3XKSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
    VS

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