Part Details for SPP11N60C3XKSA1 by Infineon Technologies AG
Results Overview of SPP11N60C3XKSA1 by Infineon Technologies AG
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (7 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
SPP11N60C3XKSA1 Information
SPP11N60C3XKSA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SPP11N60C3XKSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9422
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Newark | Mosfet, N-Ch, 600V, 11A, To-220-3, Transistor Polarity:N Channel, Continuous Drain Current Id:11A, Drain Source Voltage Vds:600V, On Resistance Rds(On):0.34Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |Infineon SPP11N60C3XKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 417 |
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$1.5800 / $3.7900 | Buy Now |
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DISTI #
SPP11N60C3XKSA1
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Avnet Americas | - Rail/Tube (Alt: SPP11N60C3XKSA1) COO: Malaysia RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
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$0.6874 / $0.7864 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 250 |
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$0.9176 / $1.4800 | Buy Now |
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DISTI #
SPP11N60C3XKSA1
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TME | Transistor: N-MOSFET, unipolar, 650V, 7A, Idm: 33A, 125W, PG-TO220 Min Qty: 1 | 19 |
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$0.9300 / $2.0600 | Buy Now |
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DISTI #
TMOSP10023
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Rutronik | MOSFET 600V 380mOhm 11A TO220 RoHS: Compliant Min Qty: 50 Package Multiple: 50 Container: Tube |
Stock DE - 250 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$0.7710 / $0.9995 | Buy Now |
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Chip Stock | SingleN-Channel650V380mOhm45nCCoolMOS™PowerMosfet-TO-220-3 | 16100 |
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RFQ | |
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DISTI #
SP000681040
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EBV Elektronik | (Alt: SP000681040) RoHS: Compliant Min Qty: 500 Package Multiple: 500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 650V 11A 125W 380m10V7A 3.9V 1 N-Channel TO-220-3 Single FETs MOSFETs RoHS | 5 |
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$1.0486 / $1.7426 | Buy Now |
Part Details for SPP11N60C3XKSA1
SPP11N60C3XKSA1 CAD Models
SPP11N60C3XKSA1 Part Data Attributes
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SPP11N60C3XKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPP11N60C3XKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Package Description | To-220, 3 Pin | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 15 Weeks | |
| Additional Feature | Avalanche Rated | |
| Avalanche Energy Rating (Eas) | 340 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 30 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 33 A | |
| Surface Mount | No | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Element Material | Silicon | |
| Turn-off Time-Max (toff) | 79 Ns |
Alternate Parts for SPP11N60C3XKSA1
This table gives cross-reference parts and alternative options found for SPP11N60C3XKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP11N60C3XKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| FCP11N60 | onsemi | $1.9109 | Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220, TO-220-3, 1000-TUBE | SPP11N60C3XKSA1 vs FCP11N60 |
| FCP11N60F | onsemi | $3.0053 | Power MOSFET, N-Channel, SUPERFET®, FRFET®, 600 V, 11 A, 380 mΩ, TO-220, TO-220-3, 1000-TUBE | SPP11N60C3XKSA1 vs FCP11N60F |
| FCP11N60 | Rochester Electronics LLC | Check for Price | 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | SPP11N60C3XKSA1 vs FCP11N60 |
| SPA11N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FP, 3 PIN | SPP11N60C3XKSA1 vs SPA11N60C3 |
| SPP11N65C3 | Rochester Electronics LLC | Check for Price | 11A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPP11N60C3XKSA1 vs SPP11N65C3 |
| FCP11N60 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | SPP11N60C3XKSA1 vs FCP11N60 |
| SPP11N60C3HKSA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | SPP11N60C3XKSA1 vs SPP11N60C3HKSA1 |
SPP11N60C3XKSA1 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the SPP11N60C3XKSA1 is -55°C to 150°C.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good thermal contact between the MOSFET and heat sink.
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The recommended gate resistor value for the SPP11N60C3XKSA1 is between 10Ω and 100Ω, depending on the specific application and switching frequency.
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Yes, the SPP11N60C3XKSA1 is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the gate drive circuitry is capable of handling the high-frequency switching.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.