Datasheets
SPP20N60C3 by: Infineon Technologies AG

Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Part Details for SPP20N60C3 by Infineon Technologies AG

Overview of SPP20N60C3 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SPP20N60C3

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-220AB 934
  • 1 $7.4025
  • 220 $4.0714
  • 492 $3.7013
$3.7013 / $7.4025 Buy Now
DISTI # SPP20N60C3
TME Transistor: N-MOSFET, unipolar, 600V, 20.7A, 208W, PG-TO220-3 Min Qty: 1 252
  • 1 $3.0700
  • 3 $2.7200
  • 10 $2.4300
  • 50 $2.2700
  • 100 $2.1100
$2.1100 / $3.0700 Buy Now
ComSIT USA COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant Stock EU - 14815
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics MOSFET N-CH 600V 20.7A TO-220 15026
  • 30 $1.9500
  • 65 $1.6000
  • 100 $1.5500
  • 135 $1.5000
  • 175 $1.4500
  • 235 $1.3000
$1.3000 / $1.9500 Buy Now

Part Details for SPP20N60C3

SPP20N60C3 CAD Models

SPP20N60C3 Part Data Attributes

SPP20N60C3 Infineon Technologies AG
Buy Now Datasheet
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SPP20N60C3 Infineon Technologies AG Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 20.7 A
Drain-source On Resistance-Max 0.19 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 208 W
Pulsed Drain Current-Max (IDM) 62.1 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPP20N60C3

This table gives cross-reference parts and alternative options found for SPP20N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPP20N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPI20N60C3XKSA1 Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 Infineon Technologies AG SPP20N60C3 vs SPI20N60C3XKSA1
STI20NM65N 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics SPP20N60C3 vs STI20NM65N
STW24NM65N 19A, 650V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 STMicroelectronics SPP20N60C3 vs STW24NM65N
IPW60R190C6XK Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SPP20N60C3 vs IPW60R190C6XK
FCPF165N65S3L1 Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 19 A, 165 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE onsemi SPP20N60C3 vs FCPF165N65S3L1
SPW24N60CFDFKSA1 Power Field-Effect Transistor, 21.7A I(D), 600V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Infineon Technologies AG SPP20N60C3 vs SPW24N60CFDFKSA1
IPP60R190C6XKSA1 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SPP20N60C3 vs IPP60R190C6XKSA1
STW23NM60N 19A, 600V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 STMicroelectronics SPP20N60C3 vs STW23NM60N
SIHP22N60S-E3 TRANSISTOR 22 A, 600 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power Vishay Siliconix SPP20N60C3 vs SIHP22N60S-E3
APT20N60BC3G Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN Microsemi Corporation SPP20N60C3 vs APT20N60BC3G

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