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Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98K0737
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Newark | N Channel Mosfet, 800V, 17A, P-To-247, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:17A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Infineon SPW17N80C3FKSA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 112 |
|
$2.7100 / $5.1900 | Buy Now |
DISTI #
SPW17N80C3FKSA1-ND
|
DigiKey | MOSFET N-CH 800V 17A TO247-3 Min Qty: 1 Lead time: 15 Weeks Container: Tube |
398 In Stock |
|
$2.4460 / $6.0000 | Buy Now |
DISTI #
SPW17N80C3FKSA1
|
Avnet Americas | Trans MOSFET N-CH 800V 17A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW17N80C3FKSA1) RoHS: Compliant Min Qty: 128 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 10328 Partner Stock |
|
$2.4300 / $2.8500 | Buy Now |
DISTI #
SPW17N80C3FKSA1
|
Avnet Americas | Trans MOSFET N-CH 800V 17A 3-Pin TO-247 Tube - Rail/Tube (Alt: SPW17N80C3FKSA1) RoHS: Compliant Min Qty: 240 Package Multiple: 30 Lead time: 15 Weeks, 0 Days Container: Tube | 0 |
|
$2.0701 | Buy Now |
DISTI #
98K0737
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Avnet Americas | Trans MOSFET N-CH 800V 17A 3-Pin TO-247 Tube - Bulk (Alt: 98K0737) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$3.5400 / $5.1900 | Buy Now |
DISTI #
726-SPW17N80C3FKSA1
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Mouser Electronics | MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 RoHS: Compliant | 249 |
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$2.4400 / $5.6400 | Buy Now |
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Future Electronics | Single N-Channel 800 V 290 mOhm 88 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 240 Lead time: 15 Weeks Container: Tube | 2160Tube |
|
$2.0100 / $2.1200 | Buy Now |
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Future Electronics | Single N-Channel 800 V 290 mOhm 88 nC CoolMOS™ Power Mosfet - TO-247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 240 Lead time: 15 Weeks Container: Tube | 1770Tube |
|
$2.0100 / $2.1200 | Buy Now |
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Rochester Electronics | SPW17N80C3 - 800V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 10328 |
|
$2.4300 / $2.8500 | Buy Now |
DISTI #
C1S322000116489
|
Chip1Stop | Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-247 RoHS: Compliant pbFree: Yes | 5700 |
|
$2.1900 / $5.1900 | Buy Now |
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SPW17N80C3FKSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW17N80C3FKSA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247 | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 670 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.29 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 51 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPW17N80C3FKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW17N80C3FKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
STB18NM80 | N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package | STMicroelectronics | SPW17N80C3FKSA1 vs STB18NM80 |
SPP17N80C3XKSA1 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SPW17N80C3FKSA1 vs SPP17N80C3XKSA1 |
SPB17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | SPW17N80C3FKSA1 vs SPB17N80C3 |
SPP17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | SPW17N80C3FKSA1 vs SPP17N80C3 |
SPA17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | SPW17N80C3FKSA1 vs SPA17N80C3 |
APT17N80SC3G | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | SPW17N80C3FKSA1 vs APT17N80SC3G |
SPW17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | SPW17N80C3FKSA1 vs SPW17N80C3 |