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Part Details for SQD40N06-14L_GE3 by Vishay Intertechnologies
Results Overview of SQD40N06-14L_GE3 by Vishay Intertechnologies
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (10 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SQD40N06-14L_GE3 Information
SQD40N06-14L_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for SQD40N06-14L_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SQD40N06-14L_GE3
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Avnet Americas | - Tape and Reel (Alt: SQD40N06-14L_GE3) COO: Germany RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.6708 / $0.6869 | Buy Now |
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DISTI #
SQD40N06-14L_GE3
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Avnet Asia | (Alt: SQD40N06-14L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 27 Weeks, 0 Days | 2000 |
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RFQ | |
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Chip Stock | N-Channel60-V(D-S)175CMosfet|VishaySQD40N06-14L_GE3 | 29270 |
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RFQ | |
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DISTI #
SQD40N06-14L_GE3
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EBV Elektronik | (Alt: SQD40N06-14L_GE3) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SQD40N06-14L_GE3
SQD40N06-14L_GE3 CAD Models
SQD40N06-14L_GE3 Part Data Attributes
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SQD40N06-14L_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQD40N06-14L_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 40A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 51 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 40 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for SQD40N06-14L_GE3
This table gives cross-reference parts and alternative options found for SQD40N06-14L_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQD40N06-14L_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFR2905ZTRL | Infineon Technologies AG | $2.1154 | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 | SQD40N06-14L_GE3 vs AUIRFR2905ZTRL |
| TK30E06N1 | Toshiba America Electronic Components | Check for Price | Nch 30V<VDSS≤60V | SQD40N06-14L_GE3 vs TK30E06N1 |
| AUIRFR2905ZTR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs AUIRFR2905ZTR |
| AUIRFR2905Z | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs AUIRFR2905Z |
| IRFR2905ZTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs IRFR2905ZTRR |
| IRFR2905ZPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs IRFR2905ZPBF |
| AUIRFR2905Z | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs AUIRFR2905Z |
| IRFR2905ZTRLPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs IRFR2905ZTRLPBF |
| IRFR2905Z | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs IRFR2905Z |
| IRFR2905ZTR | International Rectifier | Check for Price | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | SQD40N06-14L_GE3 vs IRFR2905ZTR |
SQD40N06-14L_GE3 Frequently Asked Questions (FAQ)
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The maximum operating temperature range for SQD40N06-14L_GE3 is -55°C to 175°C.
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To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
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The recommended gate resistor value for SQD40N06-14L_GE3 is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
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Yes, the SQD40N06-14L_GE3 is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize parasitic inductance and capacitance.
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Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.