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Transistors Power Field-Effect Transistors SQJ474EP-T1_GE3

SQJ474EP-T1_GE3
Description: Power Field-Effect Transistor,

Overview of SQJ474EP-T1_GE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Industrial Automation Audio and Video Systems Financial Technology (Fintech)

Available Datasheets

Part # Manufacturer Description Datasheet
FIDO5100BBCZ Analog Devices REM Switch
FIDO5200CBCZ Analog Devices REM Switch with EtherCAT
ADIN1300CCPZ Analog Devices Industrial Ethernet Gigabit PH

Price & Stock for SQJ474EP-T1_GE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # SQJ474EP-T1_GE3
Avnet Americas Trans MOSFET N-CH 100V 26A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SQJ474EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.4305
$0.4305 Buy Now
DISTI # 78-SQJ474EP-T1_GE3
Mouser Electronics MOSFETs N Ch 100Vds 20Vgs AEC-Q101 Qualified RoHS: Compliant 2783
  • 1 $0.9300
  • 10 $0.7710
  • 100 $0.6000
  • 500 $0.5080
  • 1,000 $0.4140
  • 3,000 $0.4050
$0.4050 / $0.9300 Buy Now
DISTI # SQJ474EP-T1_GE3
EBV Elektronik Trans MOSFET N-CH 100V 26A 8-Pin PowerPAK SO T/R (Alt: SQJ474EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 53 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for SQJ474EP-T1_GE3 by Vishay Intertechnologies
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Part Data Attributes for SQJ474EP-T1_GE3 by Vishay Intertechnologies
Parametric Data

SQJ474EP-T1_GE3
Vishay Intertechnologies
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G4
Reach Compliance Code
unknown
ECCN Code
EAR99
Factory Lead Time
25 Weeks
Date Of Intro
2016-07-19
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
24 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
26 A
Drain-source On Resistance-Max
0.03 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
65 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. SQJ474EP-T1_GE3
    Vishay Intertechnologies
    Power Field-Effect Transistor,
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