SQJ481EP-T1_BE3
Description: Power Field-Effect Transistor, 16A I(D), 80V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of SQJ481EP-T1_BE3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Renewable Energy Automotive

Available Datasheets

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Price & Stock for SQJ481EP-T1_BE3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 87AJ3509
Newark P-Channel 80-V (D-S) 175C Mosfet |Vishay SQJ481EP-T1_BE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.4080
$0.4080 Buy Now
DISTI # SQJ481EP-T1_BE3
Avnet Americas Transistor MOSFET P-CH 80V 16A 4-Pin PowerPAK SO - Tape and Reel (Alt: SQJ481EP-T1_BE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.3548
$0.3548 Buy Now
DISTI # 78-SQJ481EP-T1_BE3
Mouser Electronics MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET RoHS: Compliant 2950
  • 1 $0.9600
  • 10 $0.7880
  • 100 $0.6130
  • 500 $0.5200
  • 1,000 $0.4180
  • 3,000 $0.4090
$0.4090 / $0.9600 Buy Now

CAD Models for SQJ481EP-T1_BE3 by Vishay Intertechnologies
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Part Data Attributes for SQJ481EP-T1_BE3 by Vishay Intertechnologies

SQJ481EP-T1_BE3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
unknown
ECCN Code
EAR99
Factory Lead Time
18 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
30 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
16 A
Drain-source On Resistance-Max
0.08 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
130 pF
JESD-30 Code
R-PSSO-G4
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Pulsed Drain Current-Max (IDM)
60 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
60 ns
Turn-on Time-Max (ton)
30 ns
Want to compare parts?
  1. SQJ481EP-T1_BE3
    Vishay Intertechnologies
    Power Field-Effect Transistor, 16A I(D), 80V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

Alternate Parts for SQJ481EP-T1_BE3

This table gives cross-reference parts and alternative options found for SQJ481EP-T1_BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQJ481EP-T1_BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRHN93150 Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN Infineon Technologies AG SQJ481EP-T1_BE3 vs IRHN93150

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