There are no models available for this part yet.
Overview of SQJ481EP-T1_BE3 by Vishay Intertechnologies
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SQJ481EP-T1_BE3 by Vishay Intertechnologies
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
87AJ3509
|
Newark | P-Channel 80-V (D-S) 175C Mosfet |Vishay SQJ481EP-T1_BE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.4080 | Buy Now | |
DISTI #
SQJ481EP-T1_BE3
|
Avnet Americas | Transistor MOSFET P-CH 80V 16A 4-Pin PowerPAK SO - Tape and Reel (Alt: SQJ481EP-T1_BE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.3548 | Buy Now | |
DISTI #
78-SQJ481EP-T1_BE3
|
Mouser Electronics | MOSFETs P-CHANNEL 80-V (D-S) 175C MOSFET RoHS: Compliant | 2950 |
|
$0.4090 / $0.9600 | Buy Now |
CAD Models for SQJ481EP-T1_BE3 by Vishay Intertechnologies
Part Data Attributes for SQJ481EP-T1_BE3 by Vishay Intertechnologies
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Factory Lead Time
|
18 Weeks
|
Samacsys Manufacturer
|
Vishay
|
Avalanche Energy Rating (Eas)
|
30 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
80 V
|
Drain Current-Max (ID)
|
16 A
|
Drain-source On Resistance-Max
|
0.08 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
130 pF
|
JESD-30 Code
|
R-PSSO-G4
|
Number of Elements
|
1
|
Number of Terminals
|
4
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-55 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM)
|
60 A
|
Reference Standard
|
AEC-Q101
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Element Material
|
SILICON
|
Turn-off Time-Max (toff)
|
60 ns
|
Turn-on Time-Max (ton)
|
30 ns
|
Alternate Parts for SQJ481EP-T1_BE3
This table gives cross-reference parts and alternative options found for SQJ481EP-T1_BE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQJ481EP-T1_BE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRHN93150 | Power Field-Effect Transistor, 22A I(D), 100V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-1, 3 PIN | Infineon Technologies AG | SQJ481EP-T1_BE3 vs IRHN93150 |