Part Details for SQJ912AEP-T1_GE3 by Vishay Intertechnologies
Results Overview of SQJ912AEP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Available) NEW
- Number of Functional Equivalents: (1 option)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SQJ912AEP-T1_GE3 Information
SQJ912AEP-T1_GE3 by Vishay Intertechnologies is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| IXF1002EDT-G | Rochester Electronics LLC | IXF1002 - Dual Port Gigabit Ethernet Controller | |
| AM79C961AVI | Rochester Electronics LLC | Full Duplex 10/100 MBPS ETHERNET Controller for PCI Local Bus, PCNET- ISA II jumperless | |
| IXF1002ED | Rochester Electronics LLC | IXF1002ED - Dual Port Gigabit Ethernet Controller |
Price & Stock for SQJ912AEP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
57AJ0711
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Newark | Mosfet, Dual, N-Ch, 40V, Powerpak So-8L Rohs Compliant: Yes |Vishay SQJ912AEP-T1_GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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Buy Now | |
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Chip Stock | SQJ912AEPSeries30V30AAutomotiveDualN-ChannelMosfet-PowerPAK®SO-8L | 14600 |
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RFQ |
US Tariff Estimator: SQJ912AEP-T1_GE3 by Vishay Intertechnologies
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
Part Details for SQJ912AEP-T1_GE3
SQJ912AEP-T1_GE3 CAD Models
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SQJ912AEP-T1_GE3 Part Data Attributes
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SQJ912AEP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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SQJ912AEP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 40V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 34 mJ | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0093 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for SQJ912AEP-T1_GE3
This table gives cross-reference parts and alternative options found for SQJ912AEP-T1_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQJ912AEP-T1_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK9K8R7-40EX | Nexperia | $1.9352 | BUK9K8R7-40E - Dual N-channel 40 V, 9.4 mΩ logic level MOSFET@en-us | SQJ912AEP-T1_GE3 vs BUK9K8R7-40EX |
SQJ912AEP-T1_GE3 Frequently Asked Questions (FAQ)
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The recommended storage condition for SQJ912AEP-T1_GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
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Yes, SQJ912AEP-T1_GE3 is RoHS (Restriction of Hazardous Substances) compliant, meaning it does not contain hazardous substances like lead, mercury, and cadmium above the allowed limits.
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The thermal resistance of SQJ912AEP-T1_GE3 is typically around 10°C/W, but this value can vary depending on the specific application and operating conditions.
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Yes, SQJ912AEP-T1_GE3 is designed for high-reliability applications, including aerospace, defense, and industrial control systems, due to its high-quality construction and rigorous testing.
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The maximum operating voltage of SQJ912AEP-T1_GE3 is 1000V, but it's recommended to operate within the specified voltage range to ensure reliable performance and longevity.