Datasheets
SSH8N80 by:

Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for SSH8N80 by Fairchild Semiconductor Corporation

Overview of SSH8N80 by Fairchild Semiconductor Corporation

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Part Details for SSH8N80

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SSH8N80 Part Data Attributes

SSH8N80 Fairchild Semiconductor Corporation
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SSH8N80 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3P
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 1.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SSH8N80

This table gives cross-reference parts and alternative options found for SSH8N80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSH8N80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SSH8N80 Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor SSH8N80 vs SSH8N80
BUZ355 6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC SSH8N80 vs BUZ355
BUK438-800A TRANSISTOR 7.6 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors SSH8N80 vs BUK438-800A
BUZ355 Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC Motorola Semiconductor Products SSH8N80 vs BUZ355
STW8NA80 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics SSH8N80 vs STW8NA80
Part Number Description Manufacturer Compare
SSH8N80 Power Field-Effect Transistor, 8A I(D), 800V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor SSH8N80 vs SSH8N80
STW8NA80 7.2A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics SSH8N80 vs STW8NA80
BUZ355 6A, 800V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC Motorola Mobility LLC SSH8N80 vs BUZ355

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