Part Details for SSI7N60BTU by Rochester Electronics LLC
Overview of SSI7N60BTU by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SSI7N60BTU
SSI7N60BTU CAD Models
SSI7N60BTU Part Data Attributes
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SSI7N60BTU
Rochester Electronics LLC
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Datasheet
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SSI7N60BTU
Rochester Electronics LLC
7A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, I2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-262AA | |
| Package Description | I2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | NOT APPLICABLE | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 28 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SSI7N60BTU
This table gives cross-reference parts and alternative options found for SSI7N60BTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSI7N60BTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF840LCLPBF | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRF840LCLPBF |
| 2SK3116-S | 7.5A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, FIN CUT, MP-25, 3 PIN | Renesas Electronics Corporation | SSI7N60BTU vs 2SK3116-S |
| STB10NK60Z-1 | N-channel 600 V, 0.65 Ohm typ., 10 A Zener-protected SuperMESH Power MOSFET in D2PAK package | STMicroelectronics | SSI7N60BTU vs STB10NK60Z-1 |
| FQI4N60TU | Power Field-Effect Transistor, 4.4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | SSI7N60BTU vs FQI4N60TU |
| FQI7N60 | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | SSI7N60BTU vs FQI7N60 |
| IRF830AL | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRF830AL |
| IRFSL11N50APBF | Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRFSL11N50APBF |
| IRFBC40L | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | International Rectifier | SSI7N60BTU vs IRFBC40L |
| IRFSL9N60APBF | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | Vishay Siliconix | SSI7N60BTU vs IRFSL9N60APBF |
| SPI07N60S5 | 7.3A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | Rochester Electronics LLC | SSI7N60BTU vs SPI07N60S5 |