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MOSFET N-CH 60V 6A
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
SSM3K341R,LF by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| SSM3K341R | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 |
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SSM3K341R,LF
|
Avnet Americas | Transistor MOSFET N-CH 60V 6A 3-Pin SOT-23F Emboss T/R - Tape and Reel (Alt: SSM3K341R,LF) COO: Thailand RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 6000 |
|
$0.1212 / $0.1293 | Buy Now |
|
DISTI #
SMC-SSM3K341R,LF
|
Sensible Micro Corporation | Mosfet U-Mosviii-H 60V 6A 9.3Nc Mosfet RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 21+ Container: Tape & Reel | 74796 |
|
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SSM3K341R,LF
Toshiba America Electronic Components
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Datasheet
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SSM3K341R,LF
Toshiba America Electronic Components
MOSFET N-CH 60V 6A
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SOT-23F, 3 PIN | |
| Reach Compliance Code | Unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 28.9 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 35 pF | |
| JESD-30 Code | R-PDSO-F3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.2 W | |
| Pulsed Drain Current-Max (IDM) | 24 A | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
A thermal pad is recommended under the package to improve heat dissipation. A minimum of 2oz copper thickness and a thermal relief pattern are also recommended.
The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a decoupling capacitor are recommended to ensure a stable input voltage.
The maximum operating temperature range for the SSM3K341R,LF is -40°C to 125°C. However, the device's performance may degrade at extreme temperatures, and derating may be necessary.
Yes, the SSM3K341R,LF is suitable for high-reliability applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
The SSM3K341R,LF has built-in ESD protection, but it's still essential to follow proper ESD handling procedures during manufacturing and assembly to prevent damage.