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Part Details for SSM6J507NU,LF(T by Toshiba America Electronic Components
Overview of SSM6J507NU,LF(T by Toshiba America Electronic Components
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| SSM6J507NU | Toshiba Electronic Devices & Storage Corporation | MOSFET, P-ch, -30 V, -10 A, 0.02 Ohm@10V, UDFN6B |
Price & Stock for SSM6J507NU,LF(T
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
83AK2801
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Newark | Mosfet, P-Ch, 30V, 10A, Sot-1220 Rohs Compliant: Yes |Toshiba SSM6J507NU, LF(T RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.1160 / $0.1790 | Buy Now |
|
DISTI #
01AM0630
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Newark | Mosfet, P-Ch, 30V, 10A, Sot-1220 Rohs Compliant: Yes |Toshiba SSM6J507NU, LF(T RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$0.2330 / $0.4830 | Buy Now |
|
DISTI #
SSM6J507NU,LF(T
|
EBV Elektronik | Transistor MOSFET P-CH 30V 10A 6-Pin UDFN (Alt: SSM6J507NU,LF(T) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 15 Weeks, 0 Days | EBV - 9000 |
|
Buy Now | |
|
|
New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
|
$0.2210 | Buy Now |
Part Details for SSM6J507NU,LF(T
SSM6J507NU,LF(T CAD Models
SSM6J507NU,LF(T Part Data Attributes
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SSM6J507NU,LF(T
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
SSM6J507NU,LF(T
Toshiba America Electronic Components
Power Field-Effect Transistor
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, S-PDSO-N6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Toshiba | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | S-PDSO-N6 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |