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Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
| Distributor | Stock | Package | QTY Break / Prices |
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42,922 | Cut Tape |
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42,922 | Digi-Reel |
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42,000 | Reel |
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3,000 | Reel |
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SSM6N15AFU,LF Toshiba America Electronic ComponentsBuy Now Datasheet |
Compare Parts:SSM6N15AFU,LF Toshiba America Electronic Components Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET |
| Source Content uid | SSM6N15AFU,LF(D | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 0.1 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G6 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |