There are no models available for this part yet.
Overview of SSU2N60 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Internet of Things (IoT)
Computing and Data Storage
Aerospace and Defense
Healthcare
Telecommunications
Automotive
CAD Models for SSU2N60 by Samsung Semiconductor
Part Data Attributes for SSU2N60 by Samsung Semiconductor
|
|
---|---|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Package Description
|
IN-LINE, R-PSIP-T3
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
600 V
|
Drain Current-Max (ID)
|
2 A
|
Drain-source On Resistance-Max
|
5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSIP-T3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
IN-LINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
42 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Element Material
|
SILICON
|