SSU2N60
Description: Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

Overview of SSU2N60 by Samsung Semiconductor

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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

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Part Data Attributes for SSU2N60 by Samsung Semiconductor

SSU2N60
Samsung Semiconductor
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Package Description
IN-LINE, R-PSIP-T3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Element Material
SILICON
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  1. SSU2N60
    Samsung Semiconductor
    Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
    VS

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