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N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94T3302
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Newark | Mosfet Transistor, N Channel, 17 A, 800 V, 0.25 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STB18NM80 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$2.7800 / $4.9700 | Buy Now |
DISTI #
79AH6927
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Newark | Ptd High Voltage Rohs Compliant: Yes |Stmicroelectronics STB18NM80 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.0100 | Buy Now |
DISTI #
55R6910
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Newark | Mosfet, N Channel, 800V, 17A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:800V, Continuous Drain Current Id:17A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STB18NM80 RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.8500 | Buy Now |
DISTI #
497-10117-1-ND
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DigiKey | MOSFET N-CH 800V 17A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9990 In Stock |
|
$2.1175 / $5.5500 | Buy Now |
DISTI #
STB18NM80
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Avnet Americas | Trans MOSFET N-CH 800V 17A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB18NM80) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days Container: Reel | 14000 |
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$2.0038 | Buy Now |
DISTI #
511-STB18NM80
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Mouser Electronics | MOSFETs N-channel 800 V MDMesh RoHS: Compliant | 919 |
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$2.2000 / $4.5300 | Buy Now |
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STMicroelectronics | N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package RoHS: Compliant Min Qty: 1 | 919 |
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$2.6800 / $4.4400 | Buy Now |
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Future Electronics | N-Channel 80 V 0.295 Ohm Surface Mount MDMesh Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 4000Reel |
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$1.9700 / $2.0200 | Buy Now |
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Future Electronics | N-Channel 80 V 0.295 Ohm Surface Mount MDMesh Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 0Reel |
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$2.0200 / $2.0800 | Buy Now |
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Future Electronics | N-Channel 80 V 0.295 Ohm Surface Mount MDMesh Power MosFet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks Container: Reel | 0Reel |
|
$2.0200 / $2.0800 | Buy Now |
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STB18NM80
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STB18NM80
STMicroelectronics
N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in D2PAK package
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, TO-263, D2PAK-3 | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 13 Weeks | |
Samacsys Manufacturer | STMicroelectronics | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 800 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.295 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 190 W | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STB18NM80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB18NM80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SPP17N80C3XKSA1 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | STB18NM80 vs SPP17N80C3XKSA1 |
SPB17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | STB18NM80 vs SPB17N80C3 |
SPP17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Infineon Technologies AG | STB18NM80 vs SPP17N80C3 |
SPA17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, FULL PACK-3 | Infineon Technologies AG | STB18NM80 vs SPA17N80C3 |
APT17N80SC3G | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 | Microsemi Corporation | STB18NM80 vs APT17N80SC3G |
SPW17N80C3 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | STB18NM80 vs SPW17N80C3 |
SPW17N80C3FKSA1 | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT, PLASTIC PACKAGE-3 | Infineon Technologies AG | STB18NM80 vs SPW17N80C3FKSA1 |