Part Details for STB55NE06L by STMicroelectronics
Overview of STB55NE06L by STMicroelectronics
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Energy and Power Systems
Renewable Energy
Part Details for STB55NE06L
STB55NE06L CAD Models
STB55NE06L Part Data Attributes
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STB55NE06L
STMicroelectronics
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Datasheet
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STB55NE06L
STMicroelectronics
55A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 200 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB55NE06L
This table gives cross-reference parts and alternative options found for STB55NE06L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB55NE06L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK1919(L) | Power Field-Effect Transistor, 40A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | STB55NE06L vs 2SK1919(L) |
| 2SK1919(S)TR | 40 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | STB55NE06L vs 2SK1919(S)TR |
| 2SK1919(S)TL | Power Field-Effect Transistor, 40A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | STB55NE06L vs 2SK1919(S)TL |
| 2SK1919L | 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Hitachi Ltd | STB55NE06L vs 2SK1919L |
| 2SK1919(S) | Power Field-Effect Transistor, 40A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LDPAK-3 | Hitachi Ltd | STB55NE06L vs 2SK1919(S) |
| 2SK1919(S)TL | 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET | Renesas Electronics Corporation | STB55NE06L vs 2SK1919(S)TL |
| 2SK1919(S)TR | Power Field-Effect Transistor, 40A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Hitachi Ltd | STB55NE06L vs 2SK1919(S)TR |
| 2SK1919S | 40A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, LDPAK-3 | Hitachi Ltd | STB55NE06L vs 2SK1919S |