Part Details for STB5NC50T4 by STMicroelectronics
Overview of STB5NC50T4 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for STB5NC50T4
STB5NC50T4 CAD Models
STB5NC50T4 Part Data Attributes
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STB5NC50T4
STMicroelectronics
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Datasheet
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STB5NC50T4
STMicroelectronics
5.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 280 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1.5 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 100 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STB5NC50T4
This table gives cross-reference parts and alternative options found for STB5NC50T4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB5NC50T4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB5NC50-1 | 5.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | STB5NC50T4 vs STB5NC50-1 |
| PJD5NA50_L2_00001 | Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | PanJit Semiconductor | STB5NC50T4 vs PJD5NA50_L2_00001 |
| FQP5N50C_NL | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB5NC50T4 vs FQP5N50C_NL |
| SIHP5N50D-E3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | STB5NC50T4 vs SIHP5N50D-E3 |
| 2N7290H3 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | STB5NC50T4 vs 2N7290H3 |
| 2N7290R4 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | STB5NC50T4 vs 2N7290R4 |
| PJU5NA50_T0_00001 | Power Field-Effect Transistor, 5A I(D), 500V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, | PanJit Semiconductor | STB5NC50T4 vs PJU5NA50_T0_00001 |
| 2N7290R3 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | STB5NC50T4 vs 2N7290R3 |
| FQP6N50J69Z | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | STB5NC50T4 vs FQP6N50J69Z |
| 2N7290D1 | Power Field-Effect Transistor, 5A I(D), 500V, 1.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA | Harris Semiconductor | STB5NC50T4 vs 2N7290D1 |