Datasheets
STD10NM60N by: STMicroelectronics

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package

Part Details for: STD10NM60N by STMicroelectronics

Overview of: STD10NM60N by STMicroelectronics

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Price & Stock for: STD10NM60N

Distributor Stock Package QTY Break / Prices
View STD10NM60N on Digi-Key
473 Digi-Reel
  • 1 $3.1000
  • 10 $2.7820
  • 100 $2.2793
  • 500 $1.9403
  • 1,000 $1.6364
View STD10NM60N on Digi-Key
473 Cut Tape
  • 1 $3.1000
  • 10 $2.7820
  • 100 $2.2793
  • 500 $1.9403
  • 1,000 $1.6364
View STD10NM60N on Digi-Key
0 Reel
  • 2,500 $1.5546
View STD10NM60N on Avnet Americas
0 Reel
  • 2,500 $1.5093
  • 5,000 $1.4789
  • 10,000 $1.4484
  • 15,000 $1.4179
  • 20,000 $1.3874
  • 25,000 $1.3569
  • 250,000 $1.3264
View STD10NM60N on Newark
4,497 Bulk
  • 1 $2.4800
  • 10 $2.0700
  • 100 $1.5500
  • 500 $1.3300
  • 1,000 $1.1300
View STD10NM60N on Bristol Electronics
9
View STD10NM60N on Ameya Holding Limited
80,000
View STD10NM60N on Avnet Europe
0
  • 2,500 $1.2969
  • 5,000 $1.2029
  • 10,000 $1.0150
  • 15,000 $0.9210
  • 20,000 $0.8345
  • 25,000 $0.7330
  • 250,000 $0.6879
View STD10NM60N on element14 Asia-Pacific
4,497 Each
  • 1 $3.2568
  • 10 $2.9243
  • 100 $2.3953
  • 500 $2.0402
  • 1,000 $2.0326
View STD10NM60N on Farnell
4,638 Each
  • 1 $3.1342
  • 10 $2.6761
  • 100 $2.3145
  • 500 $1.9769
View STD10NM60N on Win Source Electronics
39,390
  • 40 $1.3230
  • 95 $1.0970
  • 145 $1.0650
  • 195 $1.0330
  • 250 $1.0000
  • 335 $0.9040

Part Details for: STD10NM60N

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Part Data Attributes

STD10NM60N STMicroelectronics

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STD10NM60N STMicroelectronics N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package

Source Content uid STD10NM60N
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 8 A
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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