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N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Distributor | Stock | Package | QTY Break / Prices |
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473 | Digi-Reel |
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473 | Cut Tape |
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0 | Reel |
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0 | Reel |
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4,497 | Bulk |
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9 |
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80,000 |
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0 |
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4,497 | Each |
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4,638 | Each |
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STD10NM60N STMicroelectronicsBuy Now Datasheet |
Compare Parts:STD10NM60N STMicroelectronics N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package |
Source Content uid | STD10NM60N | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Avalanche Energy Rating (Eas) | 200 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (Abs) (ID) | 8 A | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.55 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 70 W | |
Pulsed Drain Current-Max (IDM) | 32 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |