Datasheets
STD10NM60N by: STMicroelectronics

Overview of: STD10NM60N by STMicroelectronics

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Price & Stock for: STD10NM60N

Distributor Stock Package QTY Break / Prices
View this part on Digi-Key
231 Digi-Reel
  • 1 $2.9600
  • 10 $2.6610
  • 100 $2.1802
  • 500 $1.8559
  • 1,000 $1.7787
View this part on Digi-Key
231 Cut Tape
  • 1 $2.9600
  • 10 $2.6610
  • 100 $2.1802
  • 500 $1.8559
  • 1,000 $1.7787
View this part on Digi-Key
0 Reel
  • 2,500 $1.7787
View this part on Avnet Americas
0 Reel
  • 2,500 $1.5093
  • 5,000 $1.4789
  • 10,000 $1.4484
  • 15,000 $1.4179
  • 20,000 $1.3874
  • 25,000 $1.3569
  • 250,000 $1.3264
View this part on Newark
4,518 Bulk
  • 1 $2.4400
  • 10 $2.0400
  • 100 $1.5200
  • 500 $1.3100
  • 1,000 $1.1100
View this part on Bristol Electronics
9
View this part on Ameya Holding Limited
25,000
View this part on Avnet Europe
0
  • 2,500 $1.2607
  • 5,000 $1.1694
  • 10,000 $0.9867
  • 15,000 $0.8953
  • 20,000 $0.8113
  • 25,000 $0.7126
  • 250,000 $0.6687
View this part on Chip1Cloud
30,000
View this part on Chip1Cloud
30,000
View this part on element14 Asia-Pacific
4,521 Each
  • 1 $3.3161
  • 10 $2.9911
  • 25 $2.8287
  • 100 $2.4446
  • 500 $2.0827
  • 1,000 $1.8242
  • 2,500 $1.8168
View this part on Farnell
4,664 Each
  • 1 $3.1814
  • 10 $2.7164
  • 100 $2.3371
  • 500 $1.9945
View this part on Win Source Electronics
39,390
  • 40 $1.3230
  • 95 $1.0970
  • 145 $1.0650
  • 195 $1.0330
  • 250 $1.0000
  • 335 $0.9040

Part Details for: STD10NM60N

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Part Data Attributes

STD10NM60N STMicroelectronics

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STD10NM60N STMicroelectronics N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package

Source Content uid STD10NM60N
Part Life Cycle Code Active
Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Avalanche Energy Rating (Eas) 200 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (Abs) (ID) 8 A
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.55 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for: STD10NM60N

Part Number Description Manufacturer Compare
STD10NM60ND Transistors N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET STMicroelectronics STD10NM60N vs STD10NM60ND
Part Number Description Manufacturer Compare
STD10NM60ND Transistors N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET STMicroelectronics STD10NM60N vs STD10NM60ND

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