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Part Details for STD10NM60ND by STMicroelectronics
Overview of STD10NM60ND by STMicroelectronics
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for STD10NM60ND
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T3328
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Newark | Mosfet Transistor, N Channel, 8 A, 600 V, 0.57 Ohm, 10 V, 4 V Rohs Compliant: Yes |Stmicroelectronics STD10NM60ND Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 1940 |
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$1.0300 / $1.9000 | Buy Now |
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DISTI #
87T3740
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Newark | Mosfet, N Ch, 600V, 8A, To-252, Transistor Polarity:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:8A, On Resistance Rds(On):0.57Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Stmicroelectronics STD10NM60ND Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8660 / $1.1700 | Buy Now |
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DISTI #
497-12239-1-ND
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DigiKey | MOSFET N-CH 600V 8A DPAK Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2200 In Stock |
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$0.8949 / $2.0600 | Buy Now |
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DISTI #
STD10NM60ND
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Avnet Americas | Trans MOSFET N-CH 600V 8A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STD10NM60ND) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.9656 / $1.0071 | Buy Now |
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DISTI #
511-STD10NM60ND
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Mouser Electronics | MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR RoHS: Compliant | 3701 |
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$0.8650 / $1.3700 | Buy Now |
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STMicroelectronics | N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package RoHS: Compliant Min Qty: 1 | 3701 |
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$0.8500 / $1.3400 | Buy Now |
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Future Electronics | N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8500 | Buy Now |
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Future Electronics | N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8500 | Buy Now |
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Future Electronics | N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.8400 / $0.8750 | Buy Now |
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Future Electronics | N-Channel 600 V 600 mOhm Surface Mount FDmesh™ II Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.8400 / $0.8750 | Buy Now |
Part Details for STD10NM60ND
STD10NM60ND CAD Models
STD10NM60ND Part Data Attributes
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STD10NM60ND
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD10NM60ND
STMicroelectronics
N-channel 600 V, 0.57 Ohm, 8 A, DPAK FDmesh(TM) II Power MOSFET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-252 | |
| Package Description | DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | STMicroelectronics | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 70 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for STD10NM60ND
This table gives cross-reference parts and alternative options found for STD10NM60ND. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD10NM60ND, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STD10NM60N | N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in DPAK package | STMicroelectronics | STD10NM60ND vs STD10NM60N |