| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | 10 A, 60 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | 5 |
|
$1.0783 / $1.2939 | Buy Now | ||
|
DISTI #
C1S730200474106
|
Chip1Stop | Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant pbFree: Yes | 99967 |
|
$0.9740 | Buy Now | |
|
DISTI #
C1S730200297729
|
Chip1Stop | Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) IPAK Tube RoHS: Compliant pbFree: Yes | 19 |
|
$1.0300 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
STMICROELECTRONICS
|
|
Part Package Code
|
TO-251AA
|
|
Package Description
|
IPAK-3
|
|
Pin Count
|
3
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Samacsys Manufacturer
|
STMicroelectronics
|
|
Avalanche Energy Rating (Eas)
|
125 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
10 A
|
|
Drain-source On Resistance-Max
|
0.2 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-251AA
|
|
JESD-30 Code
|
R-PSIP-T3
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
IN-LINE
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
40 W
|
|
Pulsed Drain Current-Max (IDM)
|
40 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
Tin (Sn)
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQU17P06 | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | STD10PF06-1 vs FQU17P06 |
| FQU11P06TU | 9.4A, 60V, 0.185ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | STD10PF06-1 vs FQU11P06TU |
| SFU9024 | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | STD10PF06-1 vs SFU9024 |
| SFU9034 | Power Field-Effect Transistor, 14A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | STD10PF06-1 vs SFU9034 |
| FQU11P06TU | Power MOSFET, P-Channel, QFET®, -60 V, -9.4 A, 185 mΩ, IPAK, 5040-TUBE | onsemi | STD10PF06-1 vs FQU11P06TU |
| SFU2955 | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Samsung Semiconductor | STD10PF06-1 vs SFU2955 |
| FQU11P06TU | P-Channel QFET® MOSFET -60V, -9.4A, 185mΩ, TO251 (IPAK) MOLDED,3 LEAD, 5040/RAIL | Fairchild Semiconductor Corporation | STD10PF06-1 vs FQU11P06TU |
| FQU17P06TU | 12A, 60V, 0.135ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3 | Rochester Electronics LLC | STD10PF06-1 vs FQU17P06TU |
