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Part Details for STD13N60M2 by STMicroelectronics
Results Overview of STD13N60M2 by STMicroelectronics
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (5 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
STD13N60M2 Information
STD13N60M2 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STD13N60M2
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH6955
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Newark | Mosfet, N-Ch, 600V, 11A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:11A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STD13N60M2 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 359 |
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$0.7220 / $1.6300 | Buy Now |
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DISTI #
STD13N60M2
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Avnet Americas | - Tape and Reel (Alt: STD13N60M2) COO: China RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Container: Reel | 0 |
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$0.4288 / $0.4900 | Buy Now |
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DISTI #
07AH6955
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Avnet Americas | (Alt: 07AH6955) RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 0 |
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$0.7470 / $1.6100 | Buy Now |
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STMicroelectronics | N-channel 600 V, 350 mOhm typ., 11 A MDmesh M2 Power MOSFET in a DPAK package COO: Singapore RoHS: Compliant Min Qty: 1 | 3693 |
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$0.5700 / $1.4300 | Buy Now |
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Bristol Electronics | Min Qty: 5 | 2500 |
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$0.3111 / $1.1966 | Buy Now |
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Bristol Electronics | Min Qty: 2 | 70 |
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$1.3440 / $2.6880 | Buy Now |
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DISTI #
STD13N60M2
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TME | Transistor: N-MOSFET, unipolar, 600V, 7A, 110W, DPAK, ESD Min Qty: 1 | 1738 |
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$1.1100 / $2.0400 | Buy Now |
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DISTI #
STD13N60M2
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IBS Electronics | N-CHANNEL 600 V 0.35 OHM TYP. 11 A MDMESH M2 POWER MOSFET IN DPAK PACKAGE Min Qty: 2500 Package Multiple: 1 | 22500 |
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$0.6370 / $0.6650 | Buy Now |
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DISTI #
STD13N60M2
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Avnet Silica | (Alt: STD13N60M2) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days | Silica - 5000 |
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Buy Now | |
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DISTI #
STD13N60M2
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Chip One Stop | Semiconductors RoHS: Compliant pbFree: Yes Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 970 |
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$0.4870 / $1.4300 | Buy Now |
Part Details for STD13N60M2
STD13N60M2 CAD Models
STD13N60M2 Part Data Attributes
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STD13N60M2
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
STD13N60M2
STMicroelectronics
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Package Description | Dpak-3/2 | |
| Reach Compliance Code | Not Compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 14 Weeks | |
| Avalanche Energy Rating (Eas) | 125 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.38 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Small Outline | |
| Peak Reflow Temperature (Cel) | Not Specified | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Surface Mount | Yes | |
| Terminal Form | Gull Wing | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | Not Specified | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STD13N60M2
This table gives cross-reference parts and alternative options found for STD13N60M2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD13N60M2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IPP60R380C6 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | STD13N60M2 vs IPP60R380C6 |
| SPI11N65C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, I2PAK-3 | STD13N60M2 vs SPI11N65C3 |
| SPW11N60C3 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, GREEN, PLASTIC, TO-247, 3 PIN | STD13N60M2 vs SPW11N60C3 |
| IXFC22N60P | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 12A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS220, 3 PIN | STD13N60M2 vs IXFC22N60P |
| STB11NM65N-1 | STMicroelectronics | Check for Price | 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 | STD13N60M2 vs STB11NM65N-1 |
STD13N60M2 Frequently Asked Questions (FAQ)
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The maximum operating junction temperature of the STD13N60M2 is 150°C.
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Yes, the STD13N60M2 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.
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To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The recommended thermal resistance (Rth) is ≤ 1.5 K/W.
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The recommended gate drive voltage for the STD13N60M2 is between 10 V and 15 V to ensure proper switching and minimize power losses.
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Yes, the STD13N60M2 can be used in a parallel configuration to increase current handling, but ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.